Journal of Photoscience

Korean Society of Photoscience (한국광과학회)
권호 표지

Temperature Dependence of Excitonic Transitions in GaN Grown by MOCVD

  • Guangde Chen (Department of Applied Physics, Xi′an Jiaotong University, Xi′an 710049, P. R. China) ;
  • Jingyu Lin (Department of Physics, Kansas State University, Kansas 66506, USA) ;
  • Hongxing Jiang (Department of Physics, Kansas State University, Kansas 66506, USA) ;
  • Kim, Jung-Hwan (Department of Physics, Dongeui University) ;
  • Park, Sung-Eul (Department of Physics, University of Inchon)
  • Published : 2000.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.

Keywords

References

  1. J. Appl. Phys. v.76 Morkoc,H.;S.Strit;G.B.Gao;M.E.Lin;B.Sverdlov;M.Burns
  2. Appl. Phys. Lett. v.66 Temperature activated conductance in GaN/AlGaN heterostructure field effect transitors operating at temperatures up to 3000°C Asif Khan,M.;M.S.Shur;J.N.Kuznia;Q.Chen;J.Burm;W.Schaff
  3. Phys. Rev. B v.10 no.2 Monemar,B.
  4. Phys.Rev. B v.50 no.24 Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN Logothetidis,S.;J.petalas;M.Cardona and T.D.Moustakas
  5. J. Appl. Phys. v.79 no.5 Che,G.D.;M.Smit;J.Y.Lin;H.X.Jiang;A.Salvador;B.N.Sverdlov;A.Botchkarv;H.Morkoc
  6. Appl. Phys. Lett. v.66 Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire Yang,X.H.;T.J.Schmidt;W.Shan;J.J.Song;B.Goldenberg
  7. Appl. Phys. Lett. v.68 no.20 Fundamental optical tansition in GaN Chen,G.D.;M.Smith;J.Y.Lin;H.X.Jiang;Su-Huai Wei;M. Asif Khan;C.J.Sun
  8. Optical Processes in Semiconductors (Dover) Pankove,J.I.
  9. Appl. Phys. Lett. v.66 no.8 Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition Shan,W.;T.J.Schmidt;X.H.Yang;S.J.Hwang;J.J.Song;B.Goldenberg
  10. Solid State Commun v.8 Pankove;J.I.;J.E.Berkeyheiser;H.P.Maruska;J.Wittke
  11. Physica v.34 Varshini,Y.P.
  12. v.2 Willardson,R.K.;R.C.Beer
  13. Pyhs. Rev. B v.42 Temperature-dependent exciton linewidths in semiconductors Rudin,S.T.;L.Reineche;B.Segall
  14. Solid State Commun v.89 Srinivas,V.;Y.J.Chen;C.E.C.Wood
  15. Phys.Rev. B v.50 no.24 Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN Logothetidis,S.;J.petalas;M.Cardona;T.D.Moustakas
  16. J. Phys. Chem. Solids v.27 Gross,E.;S.Permogorov;B.Razbirin