Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Monitoring of III-V semiconductor surface by In-situ Surface PhotoAbsorption

  • Kim, T. J. (Department of Physics and Research Institute of Basic Sciences, Kyung Hee University) ;
  • Kim, Y. D. (Department of Physics and Research Institute of Basic Sciences, Kyung Hee University) ;
  • H. Hwang (School of Materials Science and Engineering and ISRC, Seoul National University) ;
  • E. Yoon (School of Materials Science and Engineering and ISRC, Seoul National University)
  • Published : 2003.10.01
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Abstract

We present the investigation on P- and As-desorption process from the (001) InP surface in metal organic chemical vapor deposition using surface photoabsorption (SPA). The monochromatic SPA signal showed rapid initial increase to reach In-stabilized surface value after $PH_3$ was turned off, but in case of As-desorption, the signal showed clear existence of a metastable state after the $AsH_3$ was turned off. The SPA spectra at each stable surfaces were taken to confirm the interpretation. This result indicates that the As-desorption process should be understood as a two-step process, in contrast to P-desorption of one-step process.

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