Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
권호 표지

Effect of growth interruption on InN/GaN single quantum well structures

  • Kwon, S.Y. (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, H.J. (School of Materials Science and Engineering, Seoul National University) ;
  • Na, H. (School of Materials Science and Engineering, Seoul National University) ;
  • Seo, H.C. (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, H.J. (School of Materials Science and Engineering, Seoul National University) ;
  • Shin, Y. (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Y.W. (School of Materials Science and Engineering, Seoul National University) ;
  • Yoon, S. (Samsung Advanced Institute f Technology, MD Laboratory) ;
  • Oh, H.J. (Samsung Advanced Institute f Technology, MD Laboratory) ;
  • Sone, C. (Samsung Advanced Institute f Technology, MD Laboratory) ;
  • Park, Y. (Samsung Advanced Institute f Technology, MD Laboratory) ;
  • Sun, Y.P. (Department of Physics Chungbuk National University) ;
  • Cho, Y.H (Department of Physics Chungbuk National University) ;
  • Cheong, H.M. (Department of Physics, Sogang University) ;
  • Yoon, E. (School of Materials Science and Engineering, Seoul National University)
  • Published : 2003.10.01
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Abstract

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

Keywords

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