Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Removal of Aspect-Ratio-Dependent Etching by Low-Angle Forward Reflected Neutral-Beam Etching

Low-Angle Forward Reflected Neutral Beam Etching을 이용한 Aspect-Ratio-Dependent Etching 현상의 제거

  • Min Kyung-Seok (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Park Byoung-Jae (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Yeom Geun-Young (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Kim Sung-Jin (Department of Electrical Engineering, Pohang University Science & Technology) ;
  • Lee Jae-Koo (Department of Electrical Engineering, Pohang University Science & Technology)
  • 민경석 (성균관대학교 공과대학 신소재공학과) ;
  • 박병재 (성균관대학교 공과대학 신소재공학과) ;
  • 염근영 (성균관대학교 공과대학 신소재공학과) ;
  • 김성진 (포항공과대학교 전기공학과) ;
  • 이재구 (포항공과대학교 전기공학과)
  • Published : 2006.07.01
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Abstract

In this study, the effect of using a neutral beam formed by low-angle forward reflection of a reactive ion beam on aspect-ratio-dependent etching (ARDE) has been investigated. When a SF6 Inductively Coupled Plasma and $SF_6$ ion beam etching are used to etch poly-Si, ARDE is observed and the etching of poly-Si on $SiO_2$ shows a higher ARDE effect than the etching of poly-Si on Si. However, by using neutral beam etching with neutral beam directionality higher than 70 %, ARDE during poly-Si etching by $SF_6$ can be effectively removed, regardless of the sample conditions. The mechanism for the removal of ARDE via a directional neutral beam has been demonstrated through a computer simulation of different nanoscale features by using the two-dimensional XOOPIC code and the TRIM code.

본 연구에서는 반응성 이온빔을 low-angle forward reflection으로 생성시킨 중성빔을 이용하여 Aspect Ratio Dependent Etching (ARDE) 현상이 제거되는 효과에 대하여 연구하였다. SF6 가스를 사용하여 Inductively Coupled Plasma system과 이온빔으로 각각 poly-Si 을 식각한 결과 ARDE 현상을 관찰할 수 있었으며, Si 기판위에 증착된 Poly-Si을 식각하는 것보다 $SiO_2$ 기판 위에 증착된 Poly-Si을 식각하는 것이 ARDE 현상이 더 많이 나타난다는 것을 관찰할 수 있었다. 반면에 같은 공정 조건에서 중성빔으로 poly-Si을 식각한 결과 이러한 ARDE 현상이 효과적으로 제거되었음을 관찰할 수 있었다. 중성빔을 이용하여 ARDE 현상이 제거되는 원리는 2 차원의 XOOPIC code 와 TRIM code를 사용하여 여러가지 나노스케일의 형상을 컴퓨터 시뮬레이션하여 증명하였다.

Keywords

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