An Analysis on the Material Removal Mechanism of Chemical-Mechanical Polishing Process Part I: Coupled Integrated Material Removal Modeling

화학-기계적 연마 공정의 물질제거 메커니즘 해석 Part I: 연성 통합 모델링

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.