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Active Layer Simulation for the Tolerance of Epi-layer Thickness at CaAs/AlGaAs 3-Quantum Well Quantum Cascade Lasers

GaAs/AlGaAs 3-Quantum Well 양자폭포레이저 (Quantum Cascade Lasers)에서 허용되는 에피정밀도를 위한 활성영역 모의실험

  • Lee, Hye-Jin (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Lee, Cheng-Ming (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Kim, Moon-Deock (Department of Physics, Chungnam National University)
  • 이혜진 (한국과학기술연구원 나노소자연구센터) ;
  • ;
  • 한일기 (한국과학기술연구원 나노소자연구센터) ;
  • 이정일 (한국과학기술연구원 나노소자연구센터) ;
  • 김문덕 (충남대학교 물리학과)
  • Published : 2007.07.30

Abstract

For the simulation of active region in the quantum cascade lasers (QCL), we solved Schrodinger equation utilizing Runge-Kutta method and Shotting method. Wavelength, phonon resonant energy, and dipole matrix element were simulated with the variation of active region thickness. As a result of such simulation, it was suggested the tolerance range of epi-layer thickness error when 3-quantum well QCL structures are grown.

양자폭포레이저에서 활성영역의 모의실험을 위하여 Runge-Kutta 방법과 shooting 방법을 이용하여 슈뢰딩거 방정식의 해를 구하였다. 활성영역의 두께 변화에 대하여 발진파장, 포논공명 에너지, 분극행렬요소 (dipole matrix element) 등의 특성변화를 관찰하였고, 이로부터 양자폭포레이저를 위한 에피성장에서 허용될 수 있는 최소한의 두께 정밀도를 제안하였다.

Keywords

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