ETRI Journal
- Volume 29 Issue 1
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- Pages.45-49
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- 2007
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
An Offset-Compensated LVDS Receiver with Low-Temperature Poly-Si Thin Film Transistor
- Min, Kyung-Youl (Department of Electronics and Computer Engineering, Hanyang University) ;
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Yoo, Chang-Sik
(Department of Electronics and Computer Engineering, Hanyang University)
- Received : 2006.06.23
- Published : 2007.02.28
Abstract
The poly-Si thin film transistor (TFT) shows large variations in its characteristics due to the grain boundary of poly-crystalline silicon. This results in unacceptably large input offset of low-voltage differential signaling (LVDS) receivers. To cancel the large input offset of poly-Si TFT LVDS receivers, a full-digital offset compensation scheme has been developed and verified to be able to keep the input offset under 15 mV which is sufficiently small for LVDS signal receiving.