Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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A 5Watt Power Amplifier Module Using Gallium Nitride Device

질화갈륨소자를 이용한 5Watt급 전력증폭기 모듈

  • Published : 2008.10.31
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Abstract

This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

본 논문은 질화갈륨 전력 소자를 이용한 이동통신 시스템용 전력증폭기 모듈에 대하여 기술하고 있다. 전치증폭단, 구동증폭단, 그리고 전력증폭단을 각각 설계, 제작하여 그 성능을 측정하고, 이를 바탕으로 통합 모듈을 설계하여 5Watt급 GaN 전력증폭기 모듈을 완성하였다. 하모닉 차단과 ACP를 개선하기 위하여 출력측에 결함접지구조를 삽입하였다. 개발된 질화갈륨 전력증폭기의 성능을 측정한 결과, 2.1GHz대역에서 58dB 이상의 이득, 37bBm 이상의 출력, 50dBc 이상의 하모닉 차단, 2-tone 입력시 35dBc 이상의 IMD3 특성, 그리고 35dBc 이상의 ACP 특성을 얻었다.

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References

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