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High-Ic YBCO thick film fabricated by the MOD process

MOD 공정으로 제조된 고임계전류 YBCO 후막

  • 신거명 (서울대 대학원 재료공학부) ;
  • 송규정 (한국전기연구원 초전도재료연구그룹) ;
  • 문승현 (주식회사 서남) ;
  • 유상임 (서울대학교 재료공학부)
  • Published : 2008.03.31

Abstract

We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.

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References

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