Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Development of High Density Inductively Coupled Plasma Sources for SiH4/O2/Ar Discharge

고밀도 유도 결합 플라즈마 장치의 SiH4/O2/Ar 방전에 대한 공간 평균 시뮬레이터 개발

  • Bae, S.H. (School of Electrical and Electronic Engineering, Chungbuk National University) ;
  • Kwon, D.C. (School of Electrical and Electronic Engineering, Chungbuk National University) ;
  • Yoon, N.S. (School of Electrical and Electronic Engineering, Chungbuk National University)
  • Published : 2008.09.30
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Abstract

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

고밀도 유도결합 플라즈마 장치의 $SiH_4/O_2/Ar$방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $SiH_4/O_2/Ar$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온, 중성종, 그리고 활성종들에 대해 공간 평균한 유체 방정식을 기반으로 하고 있으며, 전자가열 모델은 anomalous skin effect를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF-파워와 압력 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

Keywords

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