한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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자외선 활성화 원자층 성장 기술을 이용한 상온에서 TiO2 박막의 제조

Fabrication of TiO2 Thin Films Using UV-enhanced Atomic Layer Deposition at Room Temperature

  • 투고 : 2009.11.23
  • 심사 : 2009.12.23
  • 발행 : 2010.03.30
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초록

상온에서 고품질의 $TiO_2$ 박막을 제조하기 위하여 titanium isopropoxide [Ti(OCH$(CH_3)_2)_4$, TIP]와 $H_2O$을 이용한 자외선 활성화 원자층 증착(UV-enhanced atomic layer deposition: UV-ALD) 기술을 개발하였다. UV-ALD 기술은 상온에서 자체제어 표면 반응(self-limitting surface reaction)을 통해 균일하고 고품위 등방 특성을 갖는 순수한 $TiO_2$ 박막 증착이 가능하였다. ALD 반응 시 조사되는 자외선은 Si 기질 위에 우수한 접착력을 가지는 고품질의 $TiO_2$ 박막을 얻는데 효과적이었다. UV-ALD 기술은 높은 단차비(aspect ratio)를 가지는 trench 기질 위에 균일한 $TiO_2$ 박막을 증착하는 데에 적용되었다.

A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit $TiO_2$ thin films on Si substrates using titanium isopropoxide(TIP) and $H_2O$ as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure $TiO_2$ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality $TiO_2$ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal $TiO_2$ coats into deep trenches with high aspect ratio.

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피인용 문헌

  1. Selective Transmission Properties of Al-Ti Based Oxide Thin Films vol.22, pp.1, 2013, https://doi.org/10.5757/JKVS.2013.22.1.13
  2. Investigations of Adsorption Behaviors of Various Adsorbents Including Carbon, or TiO2 vol.21, pp.2, 2012, https://doi.org/10.5757/JKVS.2012.21.2.106