증착 온도에 따른 IZO 박막의 구조적 및 전기적 특성

Structural and electrical characteristics of IZO thin films with deposition temperature

  • 전대근 (한국기술교육대학교 신소재공학과) ;
  • 이유림 (한국기술교육대학교 신소재공학과) ;
  • 이규만 (한국기술교육대학교 신소재공학과)
  • Jun, D.G. (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Y.L. (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, K.M. (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 투고 : 2011.08.25
  • 심사 : 2011.09.15
  • 발행 : 2011.09.30

초록

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

키워드

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