Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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The effect of Ar plasma treatment on Al-doped ZnO

Ar 플라즈마 처리에 따른 Al-doped ZnO 박막특성변화

  • Jin, Sun-Moon (Department of Electronic Engineering, Sun Moon University) ;
  • Ahn, Chul-Woo (Department of Electronic Engineering, Sun Moon University) ;
  • Cho, Nam-In (Department of Electronic Engineering, Sun Moon University) ;
  • Nam, Hyoung-Gin (Department of Electronic Engineering, Sun Moon University)
  • Received : 2011.10.31
  • Accepted : 2011.12.15
  • Published : 2011.12.31
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Abstract

In this study, we investigated the effects of the post Ar plasma treatment at different RF powers for various durations on electrical, structural, and optical properties of relatively thin Al-doped zinc oxide films. The sheet resistance was observed to decrease rapidly for the first 5min, beyond which the resistance apparently saturated. As the RF power increased, the grain size and the interplanar distance of (002) planes also increased. The observed decrease in sheet resistance was stated to be a consequence of Al and/or Zn interstitials as well as grain growth. It was also found that Ar plasma treatment increased the transmittance of Al-doped zinc oxide films in most of the visible light range below the blue light.

Keywords

References

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