Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire

  • Lee, Kook-Nyung (Medical IT research center, Korea Electronics Technology Institute) ;
  • Lee, Kyoung-Gun (Medical IT research center, Korea Electronics Technology Institute) ;
  • Jung, Suk-Won (Medical IT research center, Korea Electronics Technology Institute) ;
  • Lee, Min-Ho (Medical IT research center, Korea Electronics Technology Institute) ;
  • Seong, Woo-Kyeong (Medical IT research center, Korea Electronics Technology Institute)
  • Received : 2011.02.28
  • Accepted : 2011.12.08
  • Published : 2012.05.01
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Abstract

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

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References

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