Advances in materials Research

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Electromigration-induced void evolution in upper and lower layer dual-inlaid Copper interconnect structures

  • Pete, D.J. (Datta Meghe College of Engineering) ;
  • Mhaisalkar, S.G. (School of Materials Engineering, Nanyang Technological University) ;
  • Helonde, J.B. (ITM College of Engineering) ;
  • Vairagar, A.V. (OMScientific Private Limited)
  • Received : 2011.11.10
  • Accepted : 2012.05.26
  • Published : 2012.06.25
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Abstract

Electromigration-induced void evolutions in typical upper and lower layer dual-inlaid Copper (Cu) interconnect structures were simulated by applying a phenomenological model resorting to Monte Carlo based simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Copper/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolutions observations in many studies reported by several researchers heretofore. These findings warrant need to re-investigate technologically important electromigration mechanisms by developing rigorous models based on similar concepts.

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References

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