A Study on the Simulation of AlGaN/GaN HEMT Power Devices

AlGaN/GaN HEMT 전력소자 시뮬레이션에 관한 연구

  • Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
  • Received : 2014.12.01
  • Accepted : 2014.12.22
  • Published : 2014.12.31

Abstract

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

Keywords

References

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