Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure

스퍼터 증착된 Zinc Tin Oxide 박막 트랜지스터의 공정 압력에 따른 특성 연구

  • Lee, Hong Woo (Development Center (LCD), Samsung Display) ;
  • Yang, Bong Seob (Department of Materials Science and Engineering, Seoul National University) ;
  • Oh, Seungha (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Yoon Jang (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong Joon (Department of Materials Science and Engineering, Seoul National University)
  • Received : 2014.02.24
  • Accepted : 2014.03.20
  • Published : 2014.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

Keywords

References

  1. K. Yoneda, R. Yokoyama, and T. Yamada, in Development trends of LTPS TFT LCDs for mobile applications, 2001 (IEEE), p. 85.
  2. Y. He, R. Hattori, and J. Kanicki, Electron Device Letters, IEEE 21, 590 (2000).
  3. N. K. Song, M. S. Kim, S. H. Han, Y. S. Kim, and S. K. Joo, Electron Devices, IEEE Transactions on 54, 1420 (2007). https://doi.org/10.1109/TED.2007.896357
  4. A. Choi, T. Ghong, Y. Kim, J. Oh, and J. Jang, Journal of Applied Physics 100, 113529 (2006). https://doi.org/10.1063/1.2345468
  5. J. H. Oh, E. H. Kim, S. K. Kim, J. H. Cheon, Y. D. Son, and J. Jang, Applied Physics Letters 87, 231120 (2005). https://doi.org/10.1063/1.2140585
  6. B. S. Yang, S. Park, S. Oh, Y. J. Kim, J. K. Jeong, C. S. Hwang, and H. J. Kim, J. Mater. Chem. 22, 10994 (2012). https://doi.org/10.1039/c2jm30242j
  7. H. Uchida, K. Takechi, S. Nishida, and S. Kaneko, Japanese Journal of Applied Physics 30, 3691 (1991). https://doi.org/10.1143/JJAP.30.3691
  8. T. Kamiya, K. Nomura, and H. Hosono, Science and Technology of Advanced Materials 11, 044305 (2010). https://doi.org/10.1088/1468-6996/11/4/044305
  9. D. Hong and J. F. Wager, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, L25 (2005). https://doi.org/10.1116/1.2127954
  10. K. Chopra, S. Major, and D. Pandya, Thin Solid Films 102, 1 (1983). https://doi.org/10.1016/0040-6090(83)90256-0
  11. K. Narayanan, R. Rajaraman, M. Valsakumar, K. Nair, and K. Vijayakumar, Materials research bulletin 34, 1729 (1999). https://doi.org/10.1016/S0025-5408(99)00156-7
  12. S. Yasuno, T. Kita, A. Hino, S. Morita, K. Hayashi, and T. Kugimiya, Japanese Journal of Applied Physics 52 (2013).
  13. D.-K. Kim and H.-B. Kim, Journal of Alloys and Compounds 522, 69 (2012). https://doi.org/10.1016/j.jallcom.2012.01.078
  14. M. S. Huh, B. S. Yang, J. Lee, J. Heo, S. J. Han, K. Yoon, S.-H. Yang, C. S. Hwang, and H. J. Kim, Thin Solid Films 518, 1170 (2009). https://doi.org/10.1016/j.tsf.2009.05.051
  15. M. R. Graham, C. Adkins, H. Behar, and R. Rosenbaum, Journal of Physics: Condensed Matter 10, 809 (1998). https://doi.org/10.1088/0953-8984/10/4/010
  16. J. K. Jeong, Journal of Materials Research 28, 2071 (2013). https://doi.org/10.1557/jmr.2013.214
  17. F. Libsch and J. Kanicki, Applied Physics Letters 62, 1286 (1993). https://doi.org/10.1063/1.108709
  18. S. Deane, R. Wehrspohn, and M. Powell, Physical Review B 58, 12625 (1998). https://doi.org/10.1103/PhysRevB.58.12625
  19. J. H. Kim, U. K. Kim, Y. J. Chung, and C. S. Hwang, physica status solidi (RRL) - Rapid Research Letters 5, 178 (2011).
  20. M. D. H. Chowdhury, P. Migliorato, and J. Jang, Applied Physics Letters 97, 173506 (2010). https://doi.org/10.1063/1.3503971
  21. K. H. Ji, J. I. Kim, Y. G. Mo, J. H. Jeong, S. Yang, C. S. Hwang, S. H. K. Park, M. K. Ryu, S. Y. Lee, and J. K. Jeong, Electron Device Letters, IEEE 31, 1404 (2010). https://doi.org/10.1109/LED.2010.2073439
  22. H. F. Winters and E. Kay, Journal of Applied Physics 38, 3928 (1967). https://doi.org/10.1063/1.1709043
  23. R. F. Bunshah, Deposition technologies for films and coatings: developments and applications (Noyes publications, 1982).