Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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PSPICE circuit simulation for electrical characteristic analysis of the memristor

멤리스터의 전기적 특성 분석을 위한 PSPICE 회로 해석

  • Kim, Boo-Kang (Department of Nanoscience and Engineering Inje University) ;
  • Park, Ho-Jong (Department of Electrical and Computer Engineering Pusan National University) ;
  • Park, Yongsu (Department of Electronics Engineering Chung Cheong University) ;
  • Song, Han-Jung (Department of Nanoscience and Engineering Inje University)
  • 김부강 (인제대학교 나노융합공학과) ;
  • 박호종 (부산대학교 전기전자컴퓨터공학과) ;
  • 박용수 (충청대학교 전기전자학부) ;
  • 송한정 (인제대학교 나노융합공학과)
  • Received : 2013.10.04
  • Accepted : 2014.02.05
  • Published : 2014.02.28
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Abstract

This paper presents a Electrical characteristics of the Memristor device using the PSPICE for circuit analysis. After making macro model of the Memristor device for circuit analysis, electric characteristics of the model such as time analysis, frequency and DC analysis according to the input voltage were performed by PSPICE simulation. Also, we made simple circuits of memristor series and parallel structure and analyzed the simulated SPICE results. Finally, we made a memristor-capacitor (M-C) circuit. charge and discharge characteristics were analyzed. In case of input pulse signal of 250 Hz, the Memristor-capacitor circuit showed delay time of 0.6ms, rising time of 0.58 ms and falling time of 1.6 ms.

본 논문에서는 PSPICE 프로그램을 이용하여 멤리스터 소자의 전기적 특성을 해석하였다. 멤리스터의 PSPCE 회로해석을 위한 모델링을 제안하고, 멤리스터의 전류-전압 특성을 분석하였고, 멤리스터의 입력전압에 따른 비선형 저항의 변화를 DC해석과 과도해석을 통하여 확인하였다. 또한, 멤리스터 저항의 직렬과 병렬연결에 따른 특성변화를 보았다. 한편, 멤리스터와 커패시터로 이루어진 M-C 회로를 구성하여 충전과 방전특성의 변화를 종래의 R-C회로와 비교분석하였다. 250 Hz의 구형파 입력신호 인가 시, 멤리스터-커패시터 회로의 경우에, 상승시간(Tr) 0.58 ms, 하강 시간 (Tf) 1.6 ms, 지연시간 0.6ms를 나타내었다.

Keywords

References

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