Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A 0.13-㎛ Zero-IF CMOS RF Receiver for LTE-Advanced Systems

  • Seo, Youngho (Department of Electronics Engineering, Dong-A University) ;
  • Lai, Thanhson (Department of Electronics Engineering, Dong-A University) ;
  • Kim, Changwan (Department of Electronics Engineering, Dong-A University)
  • Received : 2014.03.11
  • Accepted : 2014.05.16
  • Published : 2014.06.30
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Abstract

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

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References

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