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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

  • Lho, Young Hwan (Department of Railroad Electricity System, Woosong University) ;
  • Yang, Yil-Suk (Components & Materials Research Laboratory, ETRI)
  • Received : 2015.03.11
  • Accepted : 2015.06.25
  • Published : 2015.10.01
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Abstract

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

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