XRD의 결정구조로 살펴본 GZO 박막의 온도의존성

Temperature Dependence of Bonding Structure of GZO Thin Film Analyzed by X-ray Diffractometer

  • Oh, Teresa (Division of Semiconductor, Choengju University)
  • 투고 : 2016.03.02
  • 심사 : 2016.03.23
  • 발행 : 2016.03.31

초록

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

키워드

참고문헌

  1. Teresa Oh, "Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts," Korean Journal of Materials Research, Vol.24, pp.135-139, 2014. https://doi.org/10.3740/MRSK.2014.24.3.135
  2. Tun, C. J., Sheu, J. K., Pong, B. J., Lee, M.L., Hsieh, C. K., Hu, C. C., Chi, G. C. "Enhanced Light Output of GaN-ased Power LEDs With Transparent AlDoped AZO Current Spreading Layer", IEEE Photon. Technol. Lett, Vol. 18, pp.274-276, 2006 https://doi.org/10.1109/LPT.2005.861987
  3. Yoo Duk-yean, Kim Hyoung-ju, Kim Jun-yeong, Jo Jung-yol, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology Vol .13, pp.63-66, No.1, 2014.
  4. Teresa Oh, "Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator" Korean J. Mater. Res. Vol. 25, No. 7 1149- 1154 (2015)
  5. Kenji Nomura, Toshio Kamiya, and Hideo Hosono, "Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects", Appl. Vol. 99, pp. 053505, 2011.
  6. Hosono, H., "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application.", J. Non-Cryst. Solids, Vol. 352, pp. 851-858, 2006. https://doi.org/10.1016/j.jnoncrysol.2006.01.073
  7. Janotti and C. Van de Walle, "New insights into the role of native point defects in ZnO", J. Cryst. Growth, Vol. 287, pp. 58-65, 2006. https://doi.org/10.1016/j.jcrysgro.2005.10.043
  8. Jang-Yeon Kwon, Do-Joong Lee and Ki-Bum Kim, Transparent amorphous oxide semiconductor thin film transistor, Electronic Mate. Lett. Vol. 7/1, pp. 1-11, 2011.
  9. Meng Yu, Jungyol Jo,"Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target," Journal of the Semiconductor & Display Technology, Vol. 13, pp.35-38 No. 3, 2014.
  10. T. Oh and C. K. Choi, Comparison between SiOC Thin Films Fabricated by Using Plasma Enhance Chemical Vapor Deposition and $SiO_2$ Thin Films by Using Fourier Transform Infrared Spectroscopy. Journal of the Korean Phys. Soc. 56, 1150-1155, (2010). https://doi.org/10.3938/jkps.56.1150
  11. Kim Dong-Sun, "Characterization and deposition of ZnO thin films by Reactive Magnetron Sputtering using Inductively-Coupled Plasma (ICP)," Journal of the Semiconductor & Display Technology ,Vol.10, pp.83-89, No.2, 2011.
  12. Hong Woo Lee, Bong Seob Yang, Seungha Oh, Yoon Jang Kim, Hyeong Joon Kim, "The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure," Journal of the Semiconductor & Display Technology, Vol. 13, pp. 44-48, 2014.