Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Relationship between Optical Properties Analyzed by Photoluminance of Bonding Structure Analyzed by X-ray Diffractometer

XRD 분석에 의한 결정구조와 PL 분석에 의한 광학적 특성의 상관성

  • Oh, Teresa (Division of Semiconductor Engineering, Choengju University)
  • Received : 2016.03.11
  • Accepted : 2016.03.23
  • Published : 2016.03.31
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Abstract

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

Keywords

References

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