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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application

  • Won, Jong Il (ICT Materials & Components Research Laboratory, ETRI) ;
  • Park, Kun Sik (ICT Materials & Components Research Laboratory, ETRI) ;
  • Cho, Doo Hyung (Department of Electronic Engineering, Sogang University) ;
  • Koo, Jin Gun (ICT Materials & Components Research Laboratory, ETRI) ;
  • Kim, Sang Gi (ICT Materials & Components Research Laboratory, ETRI) ;
  • Lee, Jin Ho (ICT Materials & Components Research Laboratory, ETRI)
  • Received : 2015.07.30
  • Accepted : 2016.03.02
  • Published : 2016.04.01
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Abstract

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

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References

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