Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Stability of a QD-blended Organic Photodiode for X-ray Imaging

X-선 영상 취득을 위한 양자점 혼합 유기재료 광다이오드의 안정성에 관한 연구

  • Lee, Jehoon (Dankook University, Department of Electronic and Electrical Engineering) ;
  • Kang, Jungwon (Dankook University, Department of Electronic and Electrical Engineering)
  • 이제훈 (단국대학교 전자전기공학과) ;
  • 강정원 (단국대학교 전자전기공학과)
  • Received : 2017.05.01
  • Accepted : 2017.06.22
  • Published : 2017.06.30
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Abstract

In this study, we have studied the characteristics of the organic photodiode varying due to the blending conditions of the quantum dots (QDs). The active layer of the photodiode was formed with poly (3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, and CdSe QDs with and without ZnS shell were blended in the active layer. The photodiode with CdSe/ZnS QDs showed the highest power conversion efficiency (PCE) and short-circuit current (Jsc). The performance change of the organic photodiode by X-ray irradiation was also measured. Regardless of X-ray irradiation conditions, the photodiode with CdSe/ZnS QDs showed better stability than other cases.

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References

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