Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

  • Woo, Hyeonseok (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Kim, Jongmin (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Cho, Sangeun (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Jo, Yongcheol (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Roh, Cheong Hyun (Display Materials & Components Research Center, Korea Electronics Technology Institute) ;
  • Kim, Hyungsang (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Hahn, Cheol-Koo (Display Materials & Components Research Center, Korea Electronics Technology Institute) ;
  • Im, Hyunsik (Division of Physics and Semiconductor Science, Dongguk University)
  • Received : 2017.03.28
  • Accepted : 2017.05.04
  • Published : 2017.05.31
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Abstract

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

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References

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