Evaluation of the Machining Method on the Formation of Surface Quality of Upper Electrode for Semiconductor Plasma Etch Process

반도체 플라즈마 에칭 상부 전극의 표면 품질 형성에 관한 가공법 평가

  • Lee, Eun Young (Department of Mechatronics Engineering, Graduate School of Korea University of Technology and Education) ;
  • Kim, Moon Ki (School of Mechatronics Engineering, Korea University of Technology and Education)
  • 이은영 (한국기술교육대학교 메카트로닉스공학과) ;
  • 김문기 (한국기술교육대학교 메카트로닉스공학부)
  • Received : 2019.10.25
  • Accepted : 2019.12.12
  • Published : 2019.12.31

Abstract

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

Keywords

References

  1. Masahiko yoshino, Aravindan sivanandam, Yuki kinouchi and Takashi matsumura, "Critical depth of hard brittle materials on Nano plastic forming", Journal of Advanced Mechanical Design, Systems and Manufacturing, Vol. 2 No. 1, pp. 59-70, 2008.
  2. H. D. Jeong, "Mirror Surface Grinding Using Ultrafine Grit Wheel", Journal of the Korean Society for Precision Engineering, Vol. 13 No. 6, pp. 45-51, 1996.
  3. Jongchan Lee, Sangbaek Ha, Eunho Jeon, Whan Choi, Jaekeuk Jung, "A Study on the Silicon Grinding", Journal of the Korean Society for Precision Engineering, pp. 46-50, 1998.
  4. Yong-Woo Kim, Soo-Chang, Jeong-Woo Park, Deug-Woo Le, "The Characteristics of Machined Surface Controlled by Multi-Arrayed Diamond Tip the Characteristics of Machined Surface Controlled by Multi-Arrayed Diamond Tip", Proceedings of the KSMPE Conference, pp. 204-208, 2008.
  5. Han Seog Oh, Hong Lim Lee, "Silicon Wafering Process and Fine Grinding Process Induced Residual Mechanical Damage", Journal of the Korean Society for Precision Engineering, Vol. 19, No. 6, pp. 145-154, 2002.
  6. W.S Chae and C.G Suk, "Si The Improved Characteristics of Wet Anisotropic Etching of Si with Megasonic Wave", Journal of the Microelectronics and Packaging Society, v.11 no.4, no.33, pp. 81-86, 2004.
  7. A. Busnaina and H. Lin., "Physical removal of Nano scale defects from surfaces", IEEE/SEMI advanced semiconductor manufacturing conference, pp. 272-277, 2002.
  8. H. Line, et al., "Cleaning of high aspect ratio sub-micron trenches", IEEE/SEMI advanced semiconductor manufacturing conference, pp. 304-308, 2002.
  9. Ahmed A, Busnaina, H. Lin and N. Moumen, "Surface cleaning mechanism and future cleaning requirements", IEEE/SEMI advanced semiconductor manufacturing conference, pp. 328-333, 2002.
  10. Jung-Hyun Eum, Kwan-Young Choi, Sahn Nahm, Kyoon Choi, "Texturing of Multi-crystalline Silicon Using Isotropic Etching Solution", Journal of the Korean Ceramic Society, Vol. 46, No. 6, pp. 685-688, 2009. https://doi.org/10.4191/KCERS.2009.46.6.685