단결정 실리콘 태양전지의 광 포획 개선을 위한 Ag Nano-Dots 및 질화막 적용 연구

A Study on Application of Ag Nano-Dots and Silicon Nitride Film for Improving the Light Trapping in Mono-crystalline Silicon Solar Cell

  • 최정호 (한국기술교육대학교 전기.전자.통신공학부) ;
  • 노시철 (한국기술교육대학교 전기.전자.통신공학부) ;
  • 서화일 (한국기술교육대학교 전기.전자.통신공학부)
  • Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
  • 투고 : 2019.11.15
  • 심사 : 2019.12.12
  • 발행 : 2019.12.31

초록

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

키워드

참고문헌

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