Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

혼합 소스 HVPE 방법에 의한 4H-SiC 기판 위의 육각형 Si 에피층 성장

  • Kyoung Hwa Kim (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Seonwoo Park (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Suhyun Mun (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Hyung Soo Ahn (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Jae Hak Lee (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Min Yang (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Young Tea Chun (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Sam Nyung Yi (Department of Nano Semiconductor, Korea Maritime and Ocean University) ;
  • Won Jae Lee (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Sang-Mo Koo (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Suck-Whan Kim (Andong National University)
  • 김경화 (한국해양대학교 나노반도체공학과) ;
  • 박선우 (한국해양대학교 나노반도체공학과) ;
  • 문수현 (한국해양대학교 나노반도체공학과) ;
  • 안형수 (한국해양대학교 나노반도체공학과) ;
  • 이재학 (한국해양대학교 나노반도체공학과) ;
  • 양민 (한국해양대학교 나노반도체공학과) ;
  • 전영태 (한국해양대학교 나노반도체공학과) ;
  • 이삼녕 (한국해양대학교 나노반도체공학과) ;
  • 이원재 (동의대학교 신소재공학부) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 김석환 (안동대학교 자연과학대학 물리학과)
  • Received : 2023.03.15
  • Accepted : 2023.03.29
  • Published : 2023.04.30
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Abstract

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

4H-SiC 기판 위의 Si 성장은 전력 반도체, 바이폴라 접합 트랜지스터 및 광전자 공학에서 매우 유용한 재료로서 광범위한 응용 분야를 가지고 있다. 그러나 Si와 4H-SiC 사이에 약 20 %의 격자 불일치로 인해 4H-SiC에서 매우 양질의 결정 Si를 성장시키는 것은 상당히 어렵다. 본 논문에서는 혼합 소스 수소화물 기상 에피택시 방법을 이용하여 4H-SiC 기판에서 성장한 Al 관련 나노 구조체 클러스터에 의한 육각형 Si 에피층의 성장을 보고한다. 4H-SiC 기판 위에 육각형 Si 에피층을 성장시키기 위해 먼저 Al 관련 나노 구조체 클러스터가 형성되고 Si 원자를 흡수하여 육각형 Si 에피층이 형성되는 과정을 관찰하였다. Al 관련 나노 구조체 클러스터와 육각형 Si 에피층에 대하여 FE-SEM 및 라만 스펙트럼 결과로부터 육각형 Si 에피층은 일반적인 입방정계 Si 구조와 다른 특성을 가지는 것으로 판단된다.

Keywords

Acknowledgement

본 논문은 2022년 정부(산업통상자원부) 및 한국산업기술평가관리원의 지원을 받아 수행된 연구이며(RS-2022-00154720, Si-on-SiC 구조기반 차세대전력 반도체개발), 2021년 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원을 받아 수행되었습니다(P0012451, 2021년 산업전문인력역량강화사업).

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