반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Thin Film Characterization on Refractive Index of PECVD SiO2 Thin Films

  • Woo Hyuck Kong (Department of Electronics Engineering, Myongji University) ;
  • In Cheon Yoon (Department of Electronics Engineering, Myongji University) ;
  • Seung Jae Lee (Department of Electrical Engineering, Myongji University) ;
  • Yun Jeong Choi (Department of Electronics Engineering, Myongji University) ;
  • Sang Jeen Hong (Department of Electronics Engineering, Myongji University)
  • 투고 : 2023.05.28
  • 심사 : 2023.06.21
  • 발행 : 2023.06.30
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초록

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

키워드

과제정보

This study was conducted with the support through the Korea Institute for Advancement of Technology (G02P18800005501). We would like to express our gratitude to Mr. Y.K. Park at Wonik IPS for the providing research topic, his mentoring, and assistance in the midterm evaluation process.

참고문헌

  1. Y. Nishi and R. Doering, "Handbook of Semiconductor Manufacturing Technology," CRC Press, Boca Raton, 2008.
  2. J.-K. Choi, D.H. Kim, J. Lee and J.-B. Yoo "Effects of Process Parameters on the Growth of thick SiO2 using Plasma Enhanced Chemical Vapor Deposition with Hexamethyldisilazane," Surf. Coat. Technol., vol. 131, no. 1-3, pp. 136-140, 2000. https://doi.org/10.1016/S0257-8972(00)00751-9
  3. V.-A. Dao, V.-D. Nguyen, J. Heo, H. Choi, Y. Kim, N. Lakshminarayan, J. Yi, "Effect of N2O/SiH4 Flow Ratios on Properties of Amorphous Silicon Oxide Thin Films deposited by Inductively-coupled Plasma Chemical Vapor Deposition with Application to Silicon Surface Passivation," Surf. Coat. Technol., vol. 84, no. 3, pp. 410-414, 2009. https://doi.org/10.1016/j.vacuum.2009.09.002
  4. G. Smestad, M. Kunst, and C. Vial, "Photovoltaic response in electrochemically prepared photoluminescent porous silicon," Solar Energy Materials and Solar Cells, vol. 26, no. 4, pp. 277-283, 1992. https://doi.org/10.1016/0927-0248(92)90047-S
  5. D. Shamiryan, T. Abell, F. Iacopi, K. Maex, "Low-k Dielectric Materials," Materialstoday, vol. 7, no. 1, pp 34-39, 2004. https://doi.org/10.1016/S1369-7021(04)00053-7
  6. A. A. Khan, R. M. James and D. M. Tilbury, "Virtual Metrology and Feedback Control for Semiconductor Manufacturing Processes using Recursive Partial Least Squares," J. Proc. Contr., vol. 18, no .10, pp. 961-974, 2008. https://doi.org/10.1016/j.jprocont.2008.04.014
  7. T.-Y. Lu, Y.-P. Yang, H.-H. Lo, P. J. Wang, W. Lai, Y.-K. Fuh and T. T. Li, "Minimizing Film Residual Stress with In Situ OES Big Data using Principal Component Analysis of Deposited AlN Films by Pulsed DC Reactive Sputtering," Int. J. Adv. Manufac. Technol., vol. 114, no. 2-3, pp. 1975-1990, 2021. https://doi.org/10.1007/s00170-021-07003-8
  8. D. Jang, S. Hong, "In-situ monitoring of multiple oxide/nitride dielectric stack PECVD deposition process", Transactions on Electrical and Electronic Materials, Vol. 19, No. 1, pp. 21-26, 2018. https://doi.org/10.1007/s42341-018-0005-0
  9. S. Lee, "Water Absorption Properties of Low Dielectric SiOF Thin Film," Kor. J. Mater. Res., vol. 7, no. 11, pp 969-973, 1997.
  10. F. Iacona, "Structural Properties of SiO2 Films Prepared by Plasma-enhanced Chemical Vapor Deposition", Mat. Sci. Semi. Proc., vol. 4, no. 1-3, pp. 43-46, 2001. https://doi.org/10.1016/S1369-8001(00)00130-X
  11. G. Lucovsky, "Low-temperature Growth of Silicon Dioxide Films: A study of Chemical Bonding by Ellipsometry and Infrared Spectroscopy," J. Vac. Sci. Technol. B, vol. 5, no. 2, pp. 530-537, 1987. https://doi.org/10.1116/1.583944
  12. P. G. Pai, "Infrared Spectroscopic Study of SiOx Films Produced by Plasma Enhanced Chemical Vapor Deposition," J. Vac. Sci. Technol. A, vol. 4, no. 3, pp. 689-694, 1986. https://doi.org/10.1116/1.573833