Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect of Substrate Temperature and Oxygen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films

기판온도 및 산소 분위기 가스에 따른 IGZO 투명전도성박막의 구조적 및 전기적 특성

  • Jong Hyun Lee (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Kyu Mann Lee (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
  • 이종현 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공)
  • Received : 2023.08.30
  • Accepted : 2023.09.12
  • Published : 2023.09.30
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Abstract

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O2 flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

Keywords

Acknowledgement

본 논문은 교육부의 재원으로 한국연구재단의 BK21 FOUR 사업, 2022학년도 한국기술교육대학교 교수교육연구진흥과제 및 2023년도 교육부의 재원으로 한국연구재단의 지원을 받아 수행된 지자체-대학 협력기반 지역혁신 사업.(2022RIS-004)의 결과입니다.

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