Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Preventing Plasma Degradation of Plasma Resistant Ceramics via Surface Polishing

내플라즈마성 세라믹의 표면연마를 통한 플라즈마 열화방지

  • Jae Ho Choi (Engineering Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Young Min Byun (Engineering Materials Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Hyeong Jun Kim (Engineering Materials Center, Korea Institute of Ceramic Engineering and Technology)
  • Received : 2023.09.09
  • Accepted : 2023.09.18
  • Published : 2023.09.30
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Abstract

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

Keywords

Acknowledgement

이 논문은 한국연구재단 (NRF)[NRF-2020M3H4 A3106001] 그리고 산업통상자원부 [P0023759]으로부터 지원을 받아 연구되었습니다.

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