Bifacial photovoltaic (PV) technology has received considerable attention in recent years due to the potential to achieve a higher annual energy yield compared to its monofacial PV systems. In this study, we fabricated the bifacial c-Si PV module with a shingled design using the conventional patterned bifacial solar cells. The shingled design PV module has recently attracted attention as a high-power module. Compared to the conventional module, it can have a much more active area due to the busbar-free structure. We employed the transparent backsheet for a light reception at the rear side of the PV module. Finally, we achieved a conversion power of 453.9 W for a 1300 mm × 2000 mm area. Moreover, we perform reliability tests to verify the durability of our Shingled Design Bifacial c-Si Photovoltaic module.

Climate change is among the most important issues facing mankind in modern society. However, global PV energy expansion has been driven mainly by OECD countries. We investigate the determinants of PV energy growth by panel data of selected OECD countries from 1991 to 2018. We investigate four categories of driving factors: socioeconomic, technological, country specific, and policy factors. The test results support that PV capacity growth is significantly driven by technology development and multidimensional environment policy factors. Socioeconomic factors such as CO₂, GDP, and electricity price are statistically significant on the growth of PV energy, too. Whereas, country-specific solar potential factor is the least related. As most of the socioeconomic factors are exogenous, we need to focus more on PV technology development and policy measures.

The long-term stability of PSCs against visual and UV light, moisture, electrical bias and high temperature is an important issue for commercialization. In particular, since the operation temperature of solar cell can rise above 85℃, a study on thermal stability is required. In this study, the cause of thermal-induced degradation of PSCs was investigated using the SCAPS-1D simulation tool. First, PSCs of TiO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Au structure were exposed to a constant temperature of 85℃ to observe changes in conversion efficiency and quantum efficiency. Because the EQE reduction above 500 nm was remarkable, we simulated PSCs performance as a function of lifetime, doping density of perovskite and spiro-OMeTAD. Consequently, the main cause of thermal-induced degradation is considered to be the change in the perovskite doping concentration and lifetime due to ion migration of perovskite.

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.