The impact of bottom-layer selection on the structual, optical, and photovoltaic properties of vacuum-deposited perovskite films was systematically investigated. Atomic force microscopy (AFM) revealed that films grown on CsI exhibited the lowest root-mean-square(RMS) roughness (16.2 nm) and densely packed, large grains, indicating reduced defect density and suppressed non-radiative recombination, X-ray diffraction (XRD) and UV-Vis spectroscopy showed that CsI effectively showed the alpha-phase while suppressing the delta-phase, resulting in improved crystallinity and enhanced light absorption. Photoluminescence(PL) measurements demonstrated minimal peak shift(25.7 nm) over 15 minutes for CsI-based films, confirming superior phase stability compared to other bottom-layers. Consequently, perovskite solar cells incorporating CsI exhibited enhanced open-circuit voltage(VOC), short-circuit current density(JSC), and fill factor(FF), maintaining 101.1% of the initial efficiency and 99.2% of the maximum efficiency over 12 hours of maximum power point(MPP) tracking under 25℃ and 40% relative humidity without encapsulation. These findings highlight that bottom-layer engineering critically influences perovskite crystal growth, phase stability, and device performance. CsI, in particular, provides a combination of alpha-phase stabilization, high optical absorption, and superior film quality, making it an optimal bottom-layer for high-efficiency and long term stable perovkite solar cells.