• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.490-493
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• 2002

In this study, we have investigated optimum value for side gate length and side gate voltage of double gate (DG) MOSFET with main gate and side gate. We know that optimum side gate voltage for each side length is about 3V. Also, we know that optimum side gate length for each main gate length is about 70nm. We have presented the transconductance and subthreshold slope for each side gate length. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.777-779
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• 2003

In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to ＋5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.658-660
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• 2004

In this paper, we have investigated electrical characteristics about doble gate MOSFET with changed oxide layer thickness of nam Sate and side gate, main gate and Si-substrate. We have known that optimum thickness of nam gate and side gate at 4nm, gate and Si-substrate at 3nm. We have applied for side gate voltage 3V, and drain voltage 1.5V. finally, we have known that importance of oxide layer thickness between main gate and Si-substrate better than main gate and side Sate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.661-663
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• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Journal of The Korean Society of Agricultural Engineers
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• v.46 no.1
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• pp.27-34
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• 2004

A model test is carried out to investigate flow-induced vibration of a Tainter gate in estuary sulices. The gate model scaled with the ratio of 1：25 is made of acryl panel dimensioned 0.66m in width, 0.5m in height in the concrete test flume. Firstly, natural frequencies of the model gate are measured and the results are compared with the numerical results in order to verify the model. The amplitudes of the vibration are measured under the different gate opening and water level conditions in flow from the gate outside to the gate inside. Also 5 revised gate models with bottom width increased 0.5 cm each are tested under the different gate opening and water level. The results are analyzed to study the characteristics of the gate vibration. These test results are assessed in comparison with formerly test results, as a result, presents a design method of Tainter gate to reduce the gate vibration and a basic data for the guide manuals of gate management.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.690-692
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• 2003

In this paper, we have investigated characteristics of radio frequency for double gate MOSFET with 50nm main gate in according to variation of side gate length. We could know the increasement of cut-off frequency as the side gate length is lower. As a result, we could know the most optimum performance characteristics when side gate length was 70nm. In this time, the DG MOSFET of side gate with 70nm has very high cut-off frequency like 41.4GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.272-278
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• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.5
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• pp.42-47
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• 2004

This research has improved the problem of discharge AND gate PDP proposed before. The polarity of the DC discharge which composes AND gate is reversely designed and the cross talk problem to the adjacent scanning electrode has been improved. The AND gate proposed before operated by using non-linearity of the discharge by the space charge. In this research, new discharge NOT logic in which it was used that an applied voltage changed with the discharge circuit was added to AND gate. AND gate came to operate more stably. A selective address was able to be discharged with four horizontal scanning electrodes from the experiment result. The operation margin of the AND gate discharge obtained 34V and of the address discharge obtained 70V.

• Journal of the Korean Institute of Oriental Medical Informatics
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• v.14 no.2
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• pp.47-57
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• 2008

This paper aims at the comparative study of practicing Buddhism and Taoism related to "life gate". The term "life gate", as a physiological entity of disputed morphological identity, first appears in The Inner Canon where it refers to the eyes. Reference to a "life gate" as an internal organ body first appears in The Classic of Difficult Issues which states, "The two kidneys are not both kidneys' The left one is the kidney, and the right is the life gate." Successive scholars refers to life gate as a gi point of Taoists.. The question of the life gate invited little discussion until the Myeong and Cheong Dynasty, when various different theories were put forward. Especially Jin Sa-taek says "life gate" is the governor of the twelve place in the human body, throwing light on the meaning of it. Not that life gate denotes a local point, it does a system of life gate. Generally speaking, life gate designates cinnabar field. I think that the human body produces essence by way of life gate. That is, the human body is unified by the system of life gate. Life gate is not only the source of infusing the engine of the human body with vital energy but also as well as gi-point.