• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.45-48
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• 2011

In this paper, vacancy clustering formation and diffusion of germanium substrate was studied. The analysis method was adopted Monte Carlo method. At temperatures higher than melting point, fewer clusters formed, but there was less variation in the number of clusters than at lower temperatures, as the time increased. Equilibrium diffusivities in the clustering region were $10^2$ lower than those of free vacancies in the initial stage of kinetic lattice Monte Carlo simulations. They were expressed according to three temperature regimes: at temperatures above 1,100 K, at temperatures of 1,100-900 K, and at temperatures below 900 K. The effective mean migration energy, 1.1 eV, closely coincided with that of the 1.0-1.2 eV in experiments.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.318-323
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• 2015

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.435-439
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• 2016

We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.11.1-11.1
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• 2007

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.3113-3116
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.64.2-64.2
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• 2011

Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.