• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.6-10
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• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1760-1762
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• 2002

In this work we develop an equivalent circuit model of TCP(transformer coupled plasma) source and investigate matching characteristic. The developed circuit model includes transmission line, standard-type impedance matching network and displacement current in the plasma source. The impedance of TCP is calculated by previously developed program for various source parameters and dependance of components of matching impedance on the value of source impedance is investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1490-1493
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• 2009

In this work we present a new type of line plasma source using an internal-type ICP operated at 2MHz with a ferrite module, describe the effect of ferrite module on the enhancement of the plasma properties and the uniformity, and compare to those obtained with 13.56MHz discharge. Also the electrical characteristics of the antenna line and the characteristics of the plasma uniformity were studied.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.250.1-250.1
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• 2014

A multicusp ion source has been used widely in negative hydrogen cyclotrons mainly for radioisotope productions. The ion source is designed to have cusp geometries of magnetic field inside plasma chamber, where ions are confining and their mean lifetimes increase. The magnetic confinement produced a number of permanent magnetic poles helps to increase beam currents and reduce the emittance. Therefore optimizing the number of magnets confining more ions and increasing their mean lifetime in plasma has to be investigated in order to improve the performance of the ion source. In this work a numerical simulation of the magnetic flux density from a number of permanent magnets is carried to optimize the cusp geometries producing the highest plasma density, which is clearly indicated along the full-line cusp geometry. The effect of magnetic fields and a number of poles on the plasma structure are investigated by a computing tool. The electron confinement effect becomes stronger and the density increases with increasing the number of poles. On the contrary, the escape of electrons from the loss cone becomes more frequent as the pole number increases [1]. To understand above observation the electron and ion's trajectories along with different cusp geometries are simulated. The simulation has been shown that the optimized numbers of magnets can improve the ion density and uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.151-151
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• 2011

Atmospheric-pressure plasmas are used in a variety of materials processes. The lifetime of most atmospheric-pressure plasma sources is limits by electrode erosion due to energetic ion bombardment. These drawbacks were solved recently by several microplasma sources based on microstrip structure, which are more efficient and less prone to perturbations than other microplasma sources. In this work, we propose microplasma sources based on strip line and microstrip line, developed for the generation of microplasmas even in atmospheric air and analyzes these systems with microwave field simulation via comparative study with two previous microwave sources (Microstrip Spit Ring Resonator (MSRR), Microstrip Structure Source (MSS)).

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.64-64
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• 1991

The interaction of high-intensity, focused, nanosecond laser light with matter results in the production of high-temperature plasma, which in turn emits an intense pulse of x rays. The x-ray spectrum consists of strong line components of several keV photon energy and broad continuum. Such an x-ray source provides many advantages over conventional ones for many applications. Pulse nature of the x-ray emission is well-suited for studying transient phenomena and for imaging living biological specimen. Recent experiments have also shown that the laser plasma x ray may be used for x ray lithography. These studies and other applications will be discussed in detail.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.124-124
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• 2018

Polydopamine은 수중 접착력, 친환경 접착제, nanoparticle absorption 등 다양한 특성으로 많이 연구되고 있는 소재이다. 본 연구에서는 dopamine을 이용하여 수중 금속을 흡착시키는 thin film을 제작하였다. 종래의 Polydopamine coating 방법으로 wet coating 이 사용되고 있다. 하지만 wet 방식의 경우 시간이 오래 걸릴 뿐만 아니라 in-line, roll to roll 방식을 적용하는 것이 어렵기 때문에 생산적이지 않다. 이에 본 연구에서는 Atmospheric Pressure Plasma(APP)를 이용 하여 Polydopamine-like film을 coating 하였다. APP의 경우 vacuum system, solution tank가 필요 없고 in-line, roll to roll 방식을 적용 할 수 있기 때문에 더 경제적이고 생산적인 공정이다. 또한 기존의 Plasma polymerization 방법은 Plasma energy가 높기 때문에 source의 분자구조가 바뀌거나 atom 단위로 분해된다. source의 분자구조가 바뀌는 "Atomic polymerization", Neiswender-Rosskamp Mechanism이 적용되면 wet 방식 coating한 film과는 다른 특성을 갖게 된다. 하지만 APP polymerization은 Plasma energy가 vacuum plasma 보다 매우 낮기 때문에 stile polymerization mechanism을 구현 하는데 적합 하다. stile polymerization mechanism은 Plasma 내부에서 polymer source를 분해 성장 시켜서 Polymer film 얻는 것이 아닌 source의 분자구조가 깨지지 않으면서 polymer growing 시키는 방법이다. dopamine source의 분자구조를 최대한 유지하려고 하는 이유는 metal absorption과 같은 특성이 dopamine chemical structure에 영향을 받기 때문이다. 많은 논문들에서 dopamine의 catechol group이 metal absorption, adhesion force에 영향을 주는 주요 인자라고 주장하고 있기 때문이다. 그래서 본 논문에서는 Dopamine source의 형태를 보존하면서 Polymerization 하는 방법으로 APP process를 사용 하여 낮은 전압에서 Polydopamine-like film을 제작 하였다. APP system 의 Plasma 방전부 에 Dopamine source를 유입하기 위하여 본 논문에서는 Piezo Spray 방식을 사용 하였다. Dopamine을 evaporator 하는 것이 어렵고 chemical composition이 유사한 monomer를 사용해서 Plasma Polymerization으로 Dopamine 분자 구조를 재현하는 것도 어렵다. 그래서 본 연구에서는 Dopamine을 water에 immerse 하고 Dopamine solution을 mist 상태로 만들어서 Plasma discharge area에 유입하였다. 이러한 방법으로 만들어진 film은 Polydopamine film은 아니지만 Polydopamine film과 유사한 Chemical composition, chemical structure, metal absorption을 갖는 것을 FT-IR, SEM, XPS을 이용 하여 확인 하였다. Dopamine source의 보존에 대하여 명확하게 확인하기 위하여 FT-IR을 측정 하였다. 전압에 따른 Benzene ring, hydroxyl group의 비율을 확인 하였다. 낮은 전압으로 coating 된 Polydopamine-like film 일수록 hydroxyl group peak($3400{\sim}3000cm^{-1}$)과 비교하여 Benzene ring peak($1600{\sim}1580cm^{-1}$ and $1510{\sim}500cm^{-1}$)이 흡수를 더 많이 하는 것을 확인 할 수 있다. 이것은 Benzene ring이 파괴되지 않고 보존되는 것을 보여준다. Dopamine에서 Benzene ring은 absorption main factor인 catechol에 있는 chemical structure이다. 즉 Benzene ring peak이 높을수록 Catechol이 잘 보존 되었다는 의미 이다. Catechol의 보존은 absorption main factor가 보존 된다는 의미 이다. 이러한 Polydopamine-like film으로 As, Cr, Mg, Cu 200ppm solution에 대한 filtration 능력을 확인 하였다. As, Cr, Cu, Mg 의 제거율이 각각 약25%, 35%, 45%, 65%인 것을 확인 하였다. 이 수치는 시중에 판매되는 제품들과 비교했을 때 300%~500% 향상된 수치 이다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.243-244
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• 2009

진공 chamber 내부 plasma를 외부에서 view port를 통한 확인 및 촬영보다 효율을 높이기 위하여 chamber 내부에 무선 camera (IVC : internal vacuum camera)를 삽입하여 더 세밀하게 plasma를 촬영하였고 view port로 확인이 불가능한 부분을 촬영 및 녹화하였다. 외부 view port로 확인할 수 없는 원거리 플라즈마 소스 (remote plasma source, RPS)와 in-line type의 chamber에서 동적 (dynamic) 증착이 이루어지는 substrate에 camera를 부착하여 이동 중 target 위쪽에 방전된 plasma, ICP (inductively coupled plasma) antenna를 진공 중 chamber 내부에서 촬영 및 녹화하였다.