• 제목/요약/키워드: Low Power

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Low flow-low power 유도결합 플라즈마 원자방출 분광법에서의 분석적 특성에 관한 연구 (A Study on the Analytical Characterizations of the Low Flow-Low Power ICP-AES)

  • 양혜순;김영만;김선태;최범석
    • 분석과학
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    • 제7권3호
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    • pp.253-260
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    • 1994
  • Low power-low flow 유도결합 플라즈마 원자방출 분광법(ICP-AES)에서 분석적 특성에 대해 연구하였다. Low power ICP에서는 moderate power ICP보다 알짜세기는 감소하지만 바탕세기도 감소하여 알짜세기에 대한 바탕세기의 비는 오히려 증가하였다. Low power ICP에서도 작동조건에 따라 moderate power와 비슷한 검출한계를 얻을 수 있으며, 검량곡선도 $10^4{\sim}10^5$ 정도의 직선성을 가질 수 있었다. 알칼리 금속에 의한 이온화 방해영향은 시료운반기체의 사용량을 증가시킬수록 증가하지만, RF power의 변화에 대해서는 큰 차이가 없었다.

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설계툴을 사용한 저전력 SoC 설계 동향 (Low Power SoC Design Trends Using EDA Tools)

  • 박남진;주유상;나중찬
    • 전자통신동향분석
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    • 제35권2호
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    • pp.69-78
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    • 2020
  • Small portable devices such as mobile phones and laptops currently display a trend of high power consumption owing to their characteristics of high speed and multifunctionality. Low-power SoC design is one of the important factors that must be considered to increase portable time at limited battery capacities. Popular low power SoC design techniques include clock gating, multi-threshold voltage, power gating, and multi-voltage design. With a decreasing semiconductor process technology size, leakage power can surpass dynamic power in total power consumption; therefore, appropriate low-power SoC design techniques must be combined to reduce power consumption to meet the power specifications. This study examines several low-power SoC design trends that reduce semiconductor SoC dynamic and static power using EDA tools. Low-power SoC design technology can be a competitive advantage, especially in the IoT and AI edge environments, where power usage is typically limited.

경피신경전기자극이 근피로에 미치는 영향 (The Effects of Muscle Fatigue by Transcutaneous Electrical Nerve Stimulation)

  • 박래준
    • The Journal of Korean Physical Therapy
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    • 제11권1호
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    • pp.71-77
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    • 1999
  • The purpose of this study was to investigate the changes of muscle power by transcutaneous electrical nerve stimulation(TBNS), low frequency-low intensity(20pps, invisible muscle contraction intensity), low frequency-high intensity(20pps, visible muscle contraction), high frequency-low intensity(100pps, invisible muscle contraction intensity) and high frequency-high intensity(100pps, visible muscle contraction). The results were as follows. 1. Increased muscle power after 30 minutes of treatment by low frequency-low intensity TENS, and post-treatment 30 minutes muscle power were increased more than pre-treatment power(p<0.05). 2. Decreased muscle power after a 30 minute treatment by low frequency-high intensity TENS, and after the 30 minute treatment was terminated muscle power didn't recover to pre-treatment levels. 3. Decreased muscle power after 30 minute treatment by high frequency-low intensity TENS, but post-treatment 30 minute, muscle power didn't recover to pre-treatment levels. 4. The muscle power was remarkably decreased by high frequency-high intensity TENS after 30 minute treatment, in addition treatment terminated after 30minutes didn,t recover to pre-treatment power(p<0.05). 5. Lower frequency-low intensity TENS are good methods for preventing muscle fatigue, buty high intensity (TENS) are increased muscle fatigue. 6. Traditional TENS by high frequency-low intensity is a good method for preventing muscle fatigue.

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Low-Swing 기술을 이용한 저 전력 병렬 곱셈기 설계 (Design of a Low-Power Parallel Multiplier Using Low-Swing Technique)

  • 강장희;김정범
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 A
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    • pp.79-82
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    • 2003
  • This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to $V_{ref}-V_{TH}$, where $V_{ref}=V_{DD}-nV_{TH}$. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we propose a low-power $4\times4$ bit parallel multiplier. The proposed circuits are simulated with HSPICE under $0.35{\mu}m$ CMOS standard technology. Compare to the previous works, this circuit can reduce the power consumption rate of 11.2% and the power-delay product of 10.3%.

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센서 시스템에서의 고신뢰 물리적 복제방지 기능의 저전력 칩 설계 및 구현 (Design and Implementation of a Low Power Chip with Robust Physical Unclonable Functions on Sensor Systems)

  • 최재민;김경기
    • 센서학회지
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    • 제27권1호
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    • pp.59-63
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    • 2018
  • Among Internet of things (IoT) applications, the most demanding requirements for the widespread realization of many IoT visions are security and low power. In terms of security, IoT applications include tasks that are rarely addressed before such as secure computation, trusted sensing, and communication, privacy, and so on. These tasks ask for new and better techniques for the protection of data, software, and hardware. An integral part of hardware cryptographic primitives are secret keys and unique IDs. Physical Unclonable Functions(PUF) are a unique class of circuits that leverage the inherent variations in manufacturing process to create unique, unclonable IDs and secret keys. In this paper, we propose a low power Arbiter PUF circuit with low error rate and high reliability compared with conventional arbiter PUFs. The proposed PUF utilizes a power gating structure to save the power consumption in sleep mode, and uses a razor flip-flop to increase reliability. PUF has been designed and implemented using a FPGA and a ASIC chip (a 0.35 um technology). Experimental results show that our proposed PUF solves the metastability problem and reduce the power consumption of PUF compared to the conventional Arbiter PUF. It is expected that the proposed PUF can be used in systems required low power consumption and high reliability such as low power encryption processors and low power biomedical systems.

배터리와 태스크를 고려한 저전력 알고리듬 연구 (A Study on the Low Power Algorithm consider the Battery and the Task)

  • 윤충모;김재진
    • 디지털콘텐츠학회 논문지
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    • 제15권3호
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    • pp.433-438
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    • 2014
  • 본 논문은 배터리와 태스크를 고려한 저전력 알고리듬을 제안하였다. 제안한 알고리듬은 배터리의 용량과 사용 목표 시간에 따른 단위 시간의 소모 전력을 설정한다. 주어진 모든 태스크들의 소모 전력을 계산한다. 태스크들 중에서 소모 전력이 가장 큰 태스크의 소모 전력과 소모 전력이 가장 작은 태스크의 소모 전력의 평균을 구한다. 태스크의 소모 전력의 평균을 단위 시간을 고려하여 다시 소모 전력을 계산한다. 태스크의 평균 소모 전력의 크기가 계산된 소모 전력의 평균보다 작거나 같을 경우 태스크의 평균 소모 전력보다 큰 태스크 들을 대상으로 저전력을 수행한다. 또한, 태스크의 평균 소모 전력의 크기가 계산된 소모 전력의 평균보다 클 경우 계산된 소모 전력의 평균보다 큰 태스크 들을 대상으로 저전력을 수행한다. 저전력은 태스크의 프로세서와 디바이스의 소모 전력을 분할하여 소모 전력이 큰 부분에 대해 저전력을 수행한다. 실험은 배터리를 고려한 저전력 알고리듬인 [6]과 비교하였다. 실험결과 [6]보다 소모 전력이 감소되어 알고리듬의 효율성이 입증되었다.

저전력 저잡음 클록 합성기 PLL 설계 (Design of a Low-Power Low-Noise Clock Synthesizer PLL)

  • 박준규;심현철;박종태;유종근
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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    • pp.479-481
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    • 2006
  • This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

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낮은 온저항과 칩 효율화를 위한 Unified Trench Gate Power MOSFET의 설계에 관한 연구 (Design of Unified Trench Gate Power MOSFET for Low on Resistance and Chip Efficiency)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제26권10호
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    • pp.713-719
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    • 2013
  • Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

Low power scan testing and efficient test data compression for System-On-a-Chip

  • Jung, Jun-Mo;Chong, Jong-Wha
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.228-230
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    • 2002
  • We present a new low power scan testing and test data compression method for System-On-a-Chip (SOC). The don't cares in unspecified scan vectors are mapped to binary values for low power and encoded by adaptive encoding method for higher compression. Also, the scan-in direction of scan vectors is determined for low power. Experimental results for full-scanned versions of ISCAS 89 benchmark circuits show that the proposed method has both low power and higher compression.

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Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation

  • Chung, Hoon-Ju;Sin, Yong-Won;Cho, Bong-Rae
    • Journal of Information Display
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    • 제11권1호
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    • pp.21-23
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    • 2010
  • A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.