• Title/Summary/Keyword: Maximum oscillation frequency

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Oscillation Frequency Estimation for Detecting Feedback Bridging Faults

  • Hashizume, Masaki;Inou, Nobuyuki;Yotsuyanagi, Hiroyuki;Tamesada, Takeomi
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1980-1983
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    • 2002
  • When a feedback bridging fault is activated in a circuit, logical oscillation may occur at a signal line. If the oscillation appears, the fault may not be detected by logic testing. In order to detect such bridging faults, output logic values of the circuit should be measured at higher frequency than frequency of the logical oscillation. In this paper, a method fur estimating the maximum frequency of logical oscillation is proposed to detect such bridging faults in a circuit by logic testing. Also, it is shown by some experiments that such bridging faults can be detected by measuring output logic values at the frequency obtained by the method.

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Analysis of characteristics of PHEMT's with gate recess etching method (게이트 리세스 식각 방법에 따른 PHEMT 특성 변화)

  • 이한신;임병옥;김성찬;신동훈;전영훈;이진구
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.249-252
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    • 2002
  • we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.

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Numerical investigation of film boiling heat transfer on the horizontal surface in an oscillating system with low frequencies

  • An, Young Seock;Kim, Byoung Jae
    • Nuclear Engineering and Technology
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    • v.52 no.5
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    • pp.918-924
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    • 2020
  • Film boiling is of great importance in nuclear safety as it directly influences the integrity of nuclear fuel in case of accidents involving loss of coolant. Recently, nuclear power plant safety under earthquake conditions has received much attention. However, to the best of our knowledge, there are no existing studies reporting film boiling in an oscillating system. Most previous studies for film boiling were performed on stationary systems. In this study, numerical simulations were performed for saturated film boiling of water on a horizontal surface under low frequencies to investigate the effect of system oscillation on film boiling heat transfer. A coupled level-set and volume-of-fluid method was used to track the interface between the vapor and liquid phases. With a fixed oscillation amplitude, overall, heat transfer decreases with oscillation frequency. However, there is a frequency region in which heat transfer remains nearly constant. This lock-on phenomenon occurs when the oscillation frequency is near the natural bubble release frequency. With a fixed oscillation frequency, heat transfer decreases with oscillation amplitude. With a fixed maximum amplitude of the additional gravity, heat transfer is affected little by the combination of oscillation amplitude and frequency.

Oscillation Frequency Estimation of Feedback Bridging Faults for Test Circuit Design

  • Yamamoto, Sou;Hashizum, Masakie;Yotsuyanagi, Hiroyuki;Tamesada, Takeomi
    • Proceedings of the IEEK Conference
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    • 2000.07a
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    • pp.343-346
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    • 2000
  • When a feedback bridging fault is activated, oscillation may be generated in output signal lines. If the oscillation is generated, the fault may not be detected by logic testing. Thus, in the past we proposed a current sensor to detect feedback bridging faults by supply current testing. The sensor circuit design requires the maximum frequency of oscillation which is generated when feedback bridging fault is excited as a specification. In this paper, an estimation method of the oscillation frequency is proposed. Also, it is shown by some experiments that the frequency obtained by the method can be used for the sensor design.

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Analysis of Switching Clamped Oscillations of SiC MOSFETs

  • Ke, Junji;Zhao, Zhibin;Xie, Zongkui;Wei, Changjun;Cui, Xiang
    • Journal of Power Electronics
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    • v.18 no.3
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    • pp.892-901
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    • 2018
  • SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

Fluidic oscillation characteristics of plastic flow meter with the variation of cross-sectional shape of splitters (스플리터 단면형상변화에 따른 플라스틱 유량계의 유동진동특성)

  • Lee, Sung-Hee
    • Design & Manufacturing
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    • v.15 no.2
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    • pp.56-62
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    • 2021
  • In this study, design technology of a non-mechanical flow meter using fluidic oscillation generated during the fluid flow in the chamber was investigated. To with respect to design a splitter, which is the most important factor in fluid oscillation, a transient flow simulation analysis was performed for three types of shapes and changes in inlet flow velocity. The oscillation characteristics with respect to the time in each case were compared, and it was confirmed that the SM03 model was the best among the presented models. In addition, the FFT analysis of the fluid oscillation results for the SM03 model was used to obtain a linear correlation between the flow velocity change and the maximum frequency, and a frequency of 20.957 (Hz/m/s) per unit flow velocity was obtained. Finally, injection molding simulation and molding experiment of the chamber with the designed splitter were performed.

A Numerical Study on the Flow Characteristics of a Valveless Micropump (무밸브 마이크로 펌프의 유동 특성에 관한 수치해석)

  • Chin, Sang-Mun;Hur, Nahmkeon
    • 유체기계공업학회:학술대회논문집
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    • 2004.12a
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    • pp.748-753
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    • 2004
  • The performance of a valveless micropump driven by chamber wall oscillation was numerically investigated for various frequency and amplitude of the oscillation. The numerical study was performed in the range of oscillation frequency from 200Hz to 1000Hz and amplitude from $1{\mu}m$ to $15{\mu}m$. And optimal values for the parameters are found. At the oscillation frequency 600Hz, the net flow rate of micropump shows a maximum value. Also the results show good agreement with the experimental results. The total flow rate was increased with the oscillation amplitude. However, the net flow rate was found to be decreased over $7{\mu}m$.

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A Study on the Simulation of AlGaN/GaN HEMT Power Devices (AlGaN/GaN HEMT 전력소자 시뮬레이션에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.55-58
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    • 2014
  • The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

A Study on Stability and Performance Characteristics in Aero - Valved Pulsating Combustion System (공기밸브형 맥동연소 시스템의 안정성 및 성능특성에 관한 연구)

  • 임광렬
    • Journal of Advanced Marine Engineering and Technology
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    • v.17 no.4
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    • pp.11-19
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    • 1993
  • The experimental study was carried out to investigate the stability and the performance characteristics of the aero-valved pulsating combustion system with maximum operating capacity of 60KW. The effect of geometry of combustion system on the stable condition, the flammability limit, the total pressure oscillation amplitude, and the operating frequency can be identified, and the maximum turn-down-ratio is obtained up to 3.3. The total pressure oscillation amplitude can be controlled by tunning the length of the air inlet pipe. The empirical equation with which the operating frequency can be approximated is proposed and the discrepancy is within 5%. The volumetric efficiency is identified to be one of the important parameters determining the upper flammability limit and the maximum value of which is approximately 22%.

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Analysis of Cuoff Frequency and Maximum Oscillation Frequency Characteristics for $0.13{\mu}m$ CMOSFET ($0.13{\mu}m$ CMOSFET의 차단주파수 및 최대진동주파수 특성 분석)

  • Kim, Jong-HyucK;Lee, Seong-Hearn;Kim, Young-Wug
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.539-540
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    • 2006
  • The dependence of cutoff frequency and maximum oscillation frequency of $0.13{\mu}m$ CMOS transistors on layout parameters such as the unit gate width and gate finger number is measured and analyzed in this paper. This information will be very useful for high performance RF IC design.

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