• 한국표면공학회지
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• 제29권6호
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.454-456
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• 2014

ferroelectric perovskite의 ferroelectricity를 유지하기 위해서는 oxygen vacancy를 조절해야 한다. BTO의 경우 Ti-O(vacancy site)-Ti의 align 방향에 따라 두 종류의 vacancy가 존재하는데, Ti-O-Ti가 c-axis와 평행한 경우 BTO의 ferroelectricity가 약해진다. 본 연구에서는 BTO에 ab-biaxial strain을 가해 보고, 그 결과 두 종류의 vacancy formation energy가 어떻게 변화하는지 확인하였다. 그 결과 a, b-axis의 격자 상수가 증가하면 $V_b$가 $V_c$에 비해 안정해진다는 사실을 확인하였다. 이는 BTO의 oxygen vacancy의 vacancy site에 vacancy로 인해 남는 전자가 국지화되어 Ti-vacancy site 간 인력과 Ti-Ti간 반발력이 균형을 이룰 때 vacancy의 에너지가 낮아지기 때문이다.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• 한국세라믹학회지
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• 제56권3호
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• pp.302-307
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• 2019

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H₂O₂ (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H₂O₂ as the oxygen precursor instead of a conventional oxygen source such as H₂O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H₂O₂ concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

• 한국재료학회지
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• 제18권12호
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• pp.673-677
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• 2008

Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• 반도체디스플레이기술학회지
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• 제15권2호
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• pp.11-15
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• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• 한국세라믹학회지
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• 제52권5호
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• pp.331-337
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• 2015

$LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

• 한국결정성장학회지
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• 제9권1호
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• pp.84-88
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• 1999

결정성장 조건을 달리하여 공공관련 결함들의 발생영역의 크기가 다르게 형성되도록 성장한 실리콘 결정에서 반경 방향의 산소석출 거동을 고찰하였다. 반경 방향의 산소석출 거동은 결정성장 조건에 따른 공공 영역의 크기에 의존적이다. 반경 방향의 산소석출 거동은 공공우세 영역이 격자간원자 우세영역보다 산소석출이 증가한다. 또한 공공우세 영역과 격자간원자 우세영역 가장자리에서는 비정상적으로 산소석출이 크게 증가한다. 이 두 영역 경계에서는 산소석출이 거의 일어나지 않는다.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.70-75
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• 2016

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.