• Proceedings of the Materials Research Society of Korea Conference
• /
• 1992.05a
• /
• pp.28-29
• /
• 1992

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.1-6
• /
• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.171-175
• /
• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• Applied Chemistry for Engineering
• /
• v.20 no.5
• /
• pp.536-541
• /
• 2009

Plasma-polymerized acrylic acid films were deposited on Si wafer and KBr pellet by remote plasma-enhanced chemical vapor deposition (PECVD). Effects of plasma power, reaction pressure, indirect plasma method on the growth rate, chemical structure, and chemical bonding state of the films were investigated. Chemical structure and chemical state of the films were characterized by Fourier transformed infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis and curve fitting technique. Growth rate of the film increased to a saturation value with plasma power of 100 W, but showed the maximum with reaction pressure at 300 mtorr. Whenever W/FM factor (applied energy per gas molecule) increased by increasing plasma power or lowering pressure, the fragmentation of acrylic acid molecules was promoted. From the XPS curve fitting analyses, we found that the intensity of carboxyl COO bonding peak decreased with W/FM factor, and the tendency of intensity change of carboxylic COO peak was contrary to those of ether C-O and carbonyl C=O peaks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.5
• /
• pp.320-323
• /
• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Journal of the Korean Vacuum Society
• /
• v.7 no.1
• /
• pp.43-50
• /
• 1998

Transparent and conducting tin oxide films were prepared on Pyrex glass substrates by the remote plasma chemical vapor deposition (RPCVD). The main control variables of the RPCVD process included the deposition time, the flow rates of tetramethyltin, oxygen and argon, the radio-frequency power, and the substrate temperature. Dependence of the deposition rate, electric resistivity, optical transmittance and crystal structure on these parameters was systematically examined to prepare high qualities of tin oxide films and to better understand RPCVD process. The effect of those parameters on the properties of tin oxide films in complicatedly related on another. A tin oxide film parameters on the protimized deposition conditions exhibited deposition rate of 102 $\AA$/min, electric resistivity of $9.7\times 10^{-3}\Omega$cm and visible transmittance of ~80%.

• Journal of the Korean Vacuum Society
• /
• v.3 no.4
• /
• pp.426-433
• /
• 1994

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.513-516
• /
• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S2
• /
• pp.64-68
• /
• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Proceedings of the KIPE Conference
• /
• 2003.07b
• /
• pp.611-615
• /
• 2003

In this paper, a operation characteristics and analysis of the HB(half bridge) inverter for remote plasma system are studied. the remote plasma system is cleaning system for the chemical vapor deposition (CVD) chamber in semiconductor processing. The remote plasma system is powered by the RF generator The main power stage of the RF generator is used for the HB PWM inverter with an low pass filter in the secondary circuit of the transformer. The detailed mode analysis of HB invertor was described. The operation characteristics of Remote Plasma Source are verified by simulation and experimental results.