• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.28 no.3
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• pp.42-57
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• 2005

The National Education Information System(NEIS) has been utilized in primary and secondary schools. In this paper, we consider the NEIS should be used not only for educational administration affairs, but also for a lifelong management of national human resource. The current School Information Management System(SIMS), including the NEIS, is unsatisfactory due to the insufficiency of actual field suitability and end-user's conveniency. To this, we have devised improvements of the SIMS in the seven problem areas: ) The core business process of the school should be analyzed sufficiently and reflected in SIMS. (2) We should fully utilize groupware functions which activate the learning organization. (3) We might apply and use the CRM techniques of enterprises in SIMS. (4) The SIMS should be easy to make necessary school assessment data. (5) We should complement functions of the SIMS for a lifelong healthcare information management of national human resource. (6) The SIMS should support the school lunch management. (7) We should bring BOM and work-flow concepts into the SIMS.

• Mass Spectrometry Letters
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• v.12 no.2
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• Proceedings of the Korean Information Science Society Conference
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• 2008.06c
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• pp.36-40
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• 2008

SIMS manages data for various spatial and non-spatial as integral management system to support space information administration environment and support several application works. Without being limited to spatial data that existent spatial Data Mining question language advances handling in this paper, did so that can find useful information from various data connected with automatically data collection, artificial satellite side upside service, remote sensing, GPS. Mobile Computing and data about Spatio-Temporal. Also, we designed spatial Data Mining query language that support a spatial Data Mining exclusive use system based on SIMS.

• ETRI Journal
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• v.10 no.2
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• pp.63-69
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• 1988

SIMS(Secondary Ion Mass Spectrometry) 분석 데이터의 정량화 방법으로 이온주입에 의한 실험적 접근법과 LTE(Local Thermal Equilibrium) 모델을 사용한 준이론적 접근법 2가지가 주로 논의되고 있다. 본 고에서는 LTE 모델을 사용, SIMS data를 정량화하는 방법에 대하여 기술하였으며 아울러 BASIC language로 된 간단한 LTE 프로그램을 제시하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.46-55
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• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.815-819
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• 2013

Micropatterns of streptavidin and human epidermal carcinoma A431 cells were successfully imaged, as received and without any labeling, using cluster $Au_3{^+}$ ion beam-based time-of-flight secondary ion mass spectrometry (TOF-SIMS) together with a principal component analysis (PCA). Three different analysis ion beams ($Ga^+$, $Au^+$ and $Au_3{^+}$) were compared to obtain label-free TOF-SIMS chemical images of micropatterns of streptavidin, which were subsequently used for generating cell patterns. The image of the total positive ions obtained by the $Au_3{^+}$ primary ion beam corresponded to the actual image of micropatterns of streptavidin, whereas the total positive-ion images by $Ga^+$ or $Au^+$ primary ion beams did not. A PCA of the TOF-SIMS spectra was initially performed to identify characteristic secondary ions of streptavidin. Chemical images of each characteristic ion were reconstructed from the raw data and used in the second PCA run, which resulted in a contrasted - and corrected - image of the micropatterns of streptavidin by the $Ga^+$ and $Au^+$ ion beams. The findings herein suggest that using cluster-ion analysis beams and multivariate data analysis for TOF-SIMS chemical imaging would be an effectual method for producing label-free chemical images of micropatterns of biomolecules, including proteins and cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.203-203
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• 1999

Mass spectrometry technique provides the molecular weight distribution, data on the sequence of repeat units, polymer additives, and impurities, and structural information. time-of-Flight secondary Ion Mass Spectrometry (TOF-SIMS) has been used for structural characterization of various polymers1-2. the masses of repeat units and terminal groups and molecular weight distributions of polymers have been determined from their TOF-SIMS spectra. TOF-SMIS provides good sensitivity and structural specificity for high mass ions so that intact oligomers and large polymer fragments are observed. In this study, we investigated the detailed structural information on the oligomers and fragment ions of branched poly(1,3-butylene adipate) and branched poly[di(ethylene glycol) adipate] and the transesterification products of branched polyesters with trifluoroacetic acid or chloro difluoroacetic acid. Branched polyesters were chosen because they are important polymers but difficult to characterize; thus branched polyesters provide challanging test for TOF-SIMS. TOF-SIMS spectra of polyesters are obtained from thin polymer films cast from solution on a silver substrate. A good solvent for a polumer solution disrupts intermolecular forces between polymer chains but leaves the polumer intact. Transesterification reactions are potentially useful for characterization of high molecular weight and intractable polyesters. Transesterification products of polyesters and trifluoroacetic acid or an integral number of polyester repeat units and an additional diol. The progress of such reactions was monitored using peak intensities of reactants and products in TOF-SIMS spectra. The increasing abundance of tagged ions indicates that the reaction has progressed with time.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.192-192
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• 1999

SIMS(Secondary Ion Mass Spectrometry)는 다른 표면 분석장비와 비교하여^g , pp m,^g , pp b 단위의 미량분석이 가능한 장비로서, 특히 depth Profiling을 위한 dynamic SIMS는 Mass Spectrometer의 종류에 따라 Quadrupole SIMS (Q-SIMS)와, Magnetic Sector SIMS (M-SIMS)로 분류된다. 한편, Q-SIMS와 달리 M-SIMS의 경우, Transmission을 높여 주기 위해 Sample Holder에 수 keV의 bias를 걸어 주는데, 이로 인하여 분석 원소에 대한 Sensitivity가 향상되어 지는 반면, RSF의 변화와 같은 분석상의 Artifact가 발생하게 된다. 일반적으로 Q-SIMS의 경우에는 RSF의 RSD(Relative Standard Deviation)가 1%이내에서 보고되고 있지만 M-SIMS에 있어서는 이러한 Deviation이 M-SIMS보다 크게 나타난다. 이 차이는 주로 Sample Holder와 Immersion Lens 사이에 형성되는 Magnetic Field의 왜곡과 Spectrometer의 문제로부터 발생한다. 본 논문에서는 Sample Holder의 종류 및 holder so window 위치에 따라 RSF의 차이를 측정하고 그 data를 RS/1 통계 Package를 이용하여 계량적으로 검증하였으며, 그 차이의 원인과 대책을 제시하고자 한다. 실험에 사용된 Sample은 Si(100) p-type Wafer에 Boron을 이온 주입하여 제작하였다. 이온 주입 장비는 Varian E-500HP이며, 5.0E13 ions/cm2의 dose양을 80keV의 Energy로 각각 7도와 22도의 Tilt와 Twist Angle로 이온 주입을 하였다. SIMS분석에 사용된 Sample Holder는 각각 3 Hole, 9 Hole Type HOlder이며, 분석은 Cameca IMS-6f를 사용하여 B에 대한 Matrix Peak으로 28Si++를 얻었다. 실험 결과 3 Hole Type Sample Holder의 경우 RSF의 RSD는 5.84%, 9Hle Type Sample Holder의 경우는 14.3%로 나타났으나 분석 Window의 위치에 따르는 Grouping을 실시한 결과, 3 Hole Type Sample Holder의 경우 1.2%, 9Hole Type Sample Holder의 경우 9.8%로 RSF의 변화가 감소하였다. 이러한 Deviation은 Sample Holder를 Mount시킬 때 세 개의 Screw를 이용하여 Immersion Lens와의 평형을 잡아주기 때문에 발생하며, 이 Munting을 정확히 해줌으로써 RSF의 변화를 줄일 수 있으나, 실제로 완벽한 Mounting이 불가능하기 때문에 RSF를 일정하게 하기 위해서는 Sample Holder so Window의 취치를 일정하게 설정한 후 분석을 실시해야 한다고 판단된다.