• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.47-47
• /
• 1999

2.45 GHz 마이크로웨이브를 이용하는 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)방법으로 다이아몬드성 탄소박막(diamond-like carbon, DLC)을 증착하였다. DLC 박막의 산업 응용을 위해서는 높은 경도와 밀착력이 필요하다. 그래서 본 실험에서는 DLC 박막의 산업 응용을 위하여 ECR-PECVD 방법으로 증착된 DLC 박막의 분석결과로부터 DLC 박막의 물성과 증착조건의 관계를 조사하였다. 기판으로는 실리콘 웨이퍼와 실험용 SUS 판을 사용하였다. 아르곤 가스를 주입하여 ECR 마이크로 웨이브 플라즈마와 negative DC bias로 기판을 플라즈마 세척한 후, 수소와 메탄가스를 반응기체로 하여 DLC 박막을 증착하였다. 박막 증착시에 13.56MHz RF 전원 공급장치로 기판에 전원을 공급하였다. DLC 박막 증착의 변수는 반응기체의 호합율, 마이크로웨이브 파워, 프로세스 압력 및 RF 전원공급장치에서 유도되는 negative self DC bias 등이다. 이때 사용된 반응기체의 혼합율(메탄/수소)은 10~50%이고, 수소 가스 흐름율은 100sccm, 메탄은 10~50sccm이다. 마이크로웨이브의 크기는 360~900W, negative self DC bias는 -500~-10 V였다. 그리고 본 실험에서는 높은 증착율을 고려하여 프로세스 압력을 10~30mTorr까지 조절하였다. ER-PECVD 방법으로 증착된 DLC 박막은 SEM으로 단면, $\alpha$-Step으로 두께, Raman 분광계로 탄소 결합구조, FTIR 분광계로 탄소와 수소 결합구조, Micro-Hardness로 경도 그리고 Scratch Tester로 밀착력 등을 분석하였다.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.2 s.11
• /
• pp.11-14
• /
• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Applied Chemistry for Engineering
• /
• v.9 no.7
• /
• pp.990-997
• /
• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Korean Journal of Materials Research
• /
• v.11 no.7
• /
• pp.550-555
• /
• 2001

A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.