• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.236-243
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• 2004

The oxide etching process was characterized in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3CF_4$ gas chemistry. A statistical experimental design plus one center point was used to characterize relationships between process factors and etch response. The etch response modeled are etch rate, etch selectivity to TiN and uniformity. Etching uniformity was improved with increasing $CF_4$ flow ratio, increasing source power, and increasing pressure depending on source power. Characterization of via etching in $CHF_3CF_4$ MERIE using neural networks was successfully executed giving to highly valuable information about etching mechanism and optimum etching condition. It was found that etching uniformity was closely related to surface polymerization, DC bias, TiN and uniformity.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.33-36
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• 2006

To produce a fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_2O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The barrier ribs was etched with several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.797-804
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• 2011

In this study, the mechanisms of the three steps (the polymer deposition step, the polymer etching step and the Si etching step) that constitute the Bosch process were investigated. The effects of radicals and ions on each step were quantitatively analyzed by comparing the simulated aspect ratio dependency of the deposition or etch rate with the experimental results. In the polymer deposition step, fluorocarbon polymer is deposited by chemical reactions of $CF_x$ radicals, of which the reaction probability is 0.13. Although the polymer etching step and the Si etching step were conducted under the same conditions, the etching mechanisms of polymer and Si were found to be quite different. In the polymer etching step, both chemical etching and physical sputter-etching contribute to the polymer etching. Whereas, in the Si etching step, Si is chemically etched by F radicals, of which the reactivity is greatly increased by the bombardment of energetic ions.

• Corrosion Science and Technology
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• v.2 no.4
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• pp.189-193
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• 2003

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.43-47
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• 2000

The etching characteristic of a tantalum thin film with pure chlorine plasma was studied using an electron cyclotron resonance etcher system. Optical emission actinometry (OEA) was used for the study of the etching mechanism of a tantalum thin film and optimum process condition was achieved by OEA study. Based on this mechanism, double step etching was performed and 0.15 $\mu\textrm{m}$ L & S was acquired successfully suppressing the microloading effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1252-1254
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• 2005

Recently, PDP barrier ribs require the formation of complex structure so that they are usually formed by etching method. For producing the fine ribs structure, during the etching process the metal ions of matrix (glass) of barrier materials should be understood on the etching mechanism with etching condition. We analyzed the quantity of Pb, Si, and B ions from the etch solution as a function of etching time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1045-1048
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• 2003

In this paper, we studied plasma damage of MIS capacitor with $Al_2$O$_3$ dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same condition, leakage current and C-V measurements were carried out for Pt/A1$_2$O$_3$/Si structures. The flatband voltage shift was appeared in the C-V plot, and it was caused by the variation of the fixed interface charge and the interface trapped charge. From I-V measurement, it was found the leakage current along the periphery could not be ignored. Finally, we established the process condition of RF power 300W, 100mTorr, Ar/Cl$_2$ gas 60sccm as an optimal etching condition.