• Advanced Composite Materials
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• 제16권3호
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• pp.207-221
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• 2007

The filling process of resin injection/compression molding (I/CM) can be divided into injection and compression phases. During the resin injection the mold is kept only partially closed and thus a gap is present between the reinforcements and the upper mold. The gap results in preferential flow path. After the gap is filled with the resin, the compression action initiates and forces the resin to penetrate into the fiber preform. In the present study, the resin flow in the gap is simplified by using the Stokes approximation, while Darcy's law is used to calculate the flow field in the fiber mats. Results show that most of the injected resins enter into the gap during the injection phase. The resin injection time is extremely short so the duration of the filling process is determined by the final closing action of the mold cavity. Compared with resin transfer molding (RTM), I/CM process can reduce the mold filling time or injection pressure significantly.

• 한국재료학회지
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• 제26권8호
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.4005-4012
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• 2022

As high-level radioactive waste (HLW) generated from nuclear power plants is harmful to the human body, it must be safely disposed of by an engineered barrier system consisting of disposal canisters and buffer and backfill materials. A gap exists between the canister and buffer material in a HLW repository and between the buffer material and natural rock-this gap may reduce the water-blocking ability and heat transfer efficiency of the engineered barrier materials. Herein, the basic characteristics and thermal properties of granular bentonite, a candidate gap-filling material, were investigated, and their effects on the temperature change of the buffer material were analyzed numerically. Heat transfer by air conduction and convection in the gap were considered simultaneously. Moreover, by applying the Korean reference disposal system, changes in the properties of the buffer material were derived, and the basic design of the engineered barrier system was presented according to the gap filling material (GFM). The findings showed that a GFM with high initial thermal conductivity must be filled in the space between the buffer material and rock. Moreover, the target dry density of the buffer material varied according to the initial wet density, specific gravity, and water content values of the GFM.

• 한국전자파학회논문지
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• 제20권9호
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• pp.1003-1013
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• 2009

국내 환경의 경우, 산악 지형이 많은 지형적 특성상 수많은 터널이 존재한다. 터널은 무선 채널 환경 중 대표적인 음영지역으로서 실외 및 실내 환경의 무선 채널과는 다른 특성을 갖기 때문에 터널 환경에서의 안정된 서비스 품질을 확보하기 위해서는 전파 채널의 특성 연구가 필요하다. 특히 위성을 이용한 이동 서비스를 위해서는 터널에 의한 음영지역에서의 정상적인 위성 신호 수신이 필요하며, 이를 위해 Gap-Filler라고 하는 지상 중계기를 운영하게 되는데 이를 이용하기 위해서는 터널 환경에서의 전파전파 특성 분석을 바탕으로 한 Gap Filling 방법 연구가 필수적이다. 따라서 본 논문에서는 음영 지역에서의 정상적인 위성 신호 수신을 위하여 터널 환경에서의 ISM 대역의 전파전파 특성을 분석하고, 이를 바탕으로 효율적인 Gap Filling 방법에 대한 연구를 수행하였다.

• 한국재료학회지
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• 제26권9호
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.370-370
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• 2012

Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

• Current Applied Physics
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• 제18권11호
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• pp.1451-1457
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• 2018

Injection compression molding (ICM) is an advantageous processing method for producing thin and large polymeric parts in a robust manner. In the current study, we employed the ICM process for an energy-related application, i.e., thin and large polymeric battery case. A mold for manufacturing the battery case was fabricated using injection molding. The filling behavior of molten polymer in the mold cavity was investigated experimentally. To provide an in-depth understanding of the ICM process, ICM and normal injection molding processes were compared numerically. It was found that the ICM had a relatively low filling pressure, which resulted in reduced shrinkage and warpage of the final products. Effect of the parting line gap on the ICM characteristics, such as filling pressure, clamping force, filling time, volumetric shrinkage, and warpage, was analyzed via numerical simulation. The smaller gap in the ICM parting line led to the better dimensional stability in the finished product. The ICM sample using a 0.1 mm gap showed a 76% reduction in the dimensional deflection compared with the normal injection molded part.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 춘계학술대회
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• pp.525-528
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• 2009

본 논문은 신규 방송통신서비스인 IPTV(Internet Protocol Television)가 기존의 TV서비스와 차별화를 두고 향후 통신산업의 성장 동력으로서 성공적으로 성장할 수 있는지를 살펴보고자 한다. 먼저, 기존에 국내에서 상용화된 신규 방송통신서비스 - WiBro 및 위성 지상파 DMB - 주요 현황을 살펴보고, 신규 방송통신서비스 위치지도(Position Map of Emerging Telecommunications Services) 분석을 포함한 신규 방송통신서비스의 성장가능성을 분석하기 위한 개념 틀을 제시한다. 이를 바탕으로 기존 신규 방송통신서비스의 성공 장애 요인을 도출하고, IPTV 서비스의 향후 성장가능성을 분석한다. 마지막으로 향후 IPTV 서비스 시장의 성공적인 성장을 위한 정책적 시사점을 제시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.