Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Simulation Methodology for Diffusion Process in Poly-silicon

다결정 실리콘의 확산 공정 시뮬레이션

  • Lee, Hoong-Joo (Dept. of Computer System Engineering, Information Display Research Center, Sangmyung University) ;
  • Lee, Jun-Ha (Dept. of Computer System Engineering, Information Display Research Center, Sangmyung University)
  • 이흥주 (상명대학교 컴퓨터시스템공학과 정보디스플레이연구소) ;
  • 이준하 (상명대학교 컴퓨터시스템공학과 정보디스플레이연구소)
  • Published : 2005.03.01
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Abstract

This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion hat shown a good agreement with the SIMS data.

Keywords