Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Development of Plasma Assisted ALD equipment and Electrical Characteristic of TaN thin film deposited PAALD method

Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성

  • Do Kwan Woo (School of electrical engineering, Kyungpook National University) ;
  • Kim Kyoung Min (School of electrical engineering, Kyungpook National University) ;
  • Yang Chung Mo (School of electrical engineering, Kyungpook National University) ;
  • Park Seong Guen (School of electrical engineering, Kyungpook National University) ;
  • Na Kyoung Il (School of electrical engineering, Kyungpook National University) ;
  • Lee Jung Hee (School of electrical engineering, Kyungpook National University) ;
  • Lee Jong Hyun (School of electrical engineering, Kyungpook National University)
  • Published : 2005.06.01
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Abstract

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

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