Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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CMOS Low-voltage Filter For RFID Reader Using A Self-biased Transconductor

자기바이어스 트랜스컨덕터를 이용한 RFID 리더용 CMOS 저전압 필터

  • Jeong, Taeg-Won (Division of Applied System Engineering, Chonbuk National University) ;
  • Bang, Jun-Ho (Division of Applied System Engineering, Chonbuk National University)
  • 정택원 (전북대학교 응용시스템공학부) ;
  • 방준호 (전북대학교 응용시스템공학부)
  • Published : 2009.07.31
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Abstract

This paper describes the design of a 5th order Elliptic CMOS Gm-C low-voltage filter for the RFID reader IC. The designed filter is composed of CMOS differential transconductors by parallel gain circuits to improve the gain of the conventional self-biased differential amplifier. The filter is designed to operate in low-voltage 1.8V to meet the specification of the RFID reader filter. The results of HSPICE simulation using 1.8V-0.18${\mu}m$CMOS processing parameter showed that the designed 5th order Elliptic low-pass filter satisfied the cutoff frequency of 1.35MHz given by the design specification.

RFID Reader IC에 응용하기 위한 저전압 특성의 5차 일립틱 CMOS Gm-C 필터를 설계하였다. 설계된 필터는 CMOS 자기바이어스 차동 트랜스컨덕터를 설계하여 구성하였으며 차동 트랜스컨덕터는 기존의 자기 바이어스 차동증폭기의 이득특성을 개선하기 위하여 병렬형으로 구성되었다. 설계된 필터는 RFID 리더용 저전압 필터 설계사양에 따라 1.8V의 저전압으로 동작이 가능하도록 설계되었다. 1.8V, 0.18${\mu}m$CMOS 공정 파라미터를 사용하여 HSPICE 시뮬레이션 결과, 설계된 5차 일립틱 저역 필터가 설계사양인 1.35MHz의 차단주파수를 만족함을 확인하였다.

Keywords

References

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