Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Fabrication of [320×256]-FPA Infrared Thermographic Module Based on [InAs/GaSb] Strained-Layer Superlattice

[InAs/GaSb] 응력 초격자에 기초한 [320×256]-FPA 적외선 열영상 모듈 제작

  • Lee, S.J. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science) ;
  • Noh, S.K. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science) ;
  • Bae, S.H. (i3system Inc.) ;
  • Jung, H. (i3system Inc.)
  • 이상준 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실) ;
  • 노삼규 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실) ;
  • 배수호 (아이쓰리시스템(주)) ;
  • 정한 (아이쓰리시스템(주))
  • Received : 2010.09.30
  • Accepted : 2010.12.13
  • Published : 2011.01.30
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Abstract

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

InAs/GaSb 제2형 응력초격자(SLS)를 활성층에 탑재한 [$320{\times}256$] 초점면 배열(FPA) 적외선 열영상 모듈을 제작하고 열영상을 구현하였다. p-i-n형으로 설계된 소자의 활성층(i) 구조는 300 주기의 [13/7]-ML [InAs/GaSb]-SLS로 구성되어 있고, p와 n 전극층에는 각각 60주기의 [InAs:Be/GaSb]-SLS와 115 주기의 [InAs:Si/GaSb]-SLS 구조를 채용하였다. 시험소자의 광반응(PR) 스펙트럼으로부터 피크 파장(${\lambda}_p$)과 차단 파장(${\lambda}_{co}$)은 각각 ${\sim}3.1/2.7{\mu}m$과 ${\sim}3.8{\mu}m$이고 180 K 온도까지 동작을 확인하였다. 단위 화소의 간격/메사는 $30/24{\mu}m$ 규격으로 설계되었으며, [$320{\times}256$]-FPA는 표준 광묘화법으로 제작하였다. $18/10{\mu}m$의 In-bump/UBM 공정과 flip-chip 결합 기술을 적용하여 FPA-ROIC 열영상 모듈을 완성하였으며, 중적외선용 영상구동 회로 및 S/W를 활용하여 열영상을 시연하였다.

Keywords

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