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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Millimeter-Wave High-Linear CMOS Low-Noise Amplifier Using Multiple-Gate Transistors

  • Kim, Ji-Hoon (Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Choi, Woo-Yeol (Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Quraishi, Abdus Samad (Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kwon, Young-Woo (Department of Electrical Engineering and Computer Science, Seoul National University)
  • Received : 2010.07.02
  • Accepted : 2010.10.04
  • Published : 2011.06.30
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Abstract

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

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References

  1. W. Choi et al., "Scalable Small-Signal Modeling of RF CMOS FET Based on 3-D EM-Based Extraction of Parasitic Effects and Its Application to Millimeter-Wave Amplifier Design," IEEE Trans. Microw. Theory Tech., vol. 57, no. 12, Dec. 2009, pp. 3345-3353. https://doi.org/10.1109/TMTT.2009.2034067
  2. Y.-H. Chen et al., "A 24-GHz Receiver Frontend With an LO Signal Generator in 0.18-${\mu}m$ CMOS," IEEE Trans. Microw. Theory Tech., vol. 56, no. 5, May 2008, pp. 1043-1051. https://doi.org/10.1109/TMTT.2008.920154
  3. V. Jain et al., "A CMOS 22-29 GHz Receiver Front-End for UWB Automotive Pulse-Radars," IEEE Trans. Microw. Theory Tech., vol. 57, no. 8, Aug. 2009, pp. 1903-1914. https://doi.org/10.1109/TMTT.2009.2025420
  4. T. Kim, B. Kim, and K. Lee, "Highly Linear Receiver Front-End Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors," IEEE J. Solid-State Circuits, vol. 39, no. 1, Jan. 2004, pp. 223-229. https://doi.org/10.1109/JSSC.2003.820843
  5. N. Kim, L.E. Larson, and V. Aparin, "A Highly Linear SAWLess CMOS Receiver Using a Mixer With Embedded Tx Filtering for CDMA," IEEE J. Solid-State Circuits, vol. 44, no. 8, Aug. 2009, pp. 2126-2137. https://doi.org/10.1109/JSSC.2009.2022921
  6. S.A. Maas, Nonlinear Microwave and RF Circuits, Boston, MA: Artech House, 1988.
  7. H.-Y. Yang et al., "0.18 ${\mu}m$ 21-27 GHz CMOS UWB LNA with 9.3${\pm}$1.3 dB Gain and 103.9${\pm}$8.1 ps Group Delay," Electron. Lett., vol. 14, no.17, 2008, pp. 1014-1016.
  8. K.W. Yu et al. "K-Band Low-Noise Amplifiers Using 0.18 ${\mu}m$ CMOS Technology," IEEE Microw. Wireless Compon. Lett., vol. 14, no. 3, 2004, pp. 106-108. https://doi.org/10.1109/LMWC.2004.825175
  9. S.C. Shin et al., "A 24-GHz 3.9-dB NF Low-Noise Amplifier Using 0.18 ${\mu}m$ CMOS Technology," IEEE Microw. Wireless and Compon. Lett., vol. 15, no. 7, 2005, pp. 448-450. https://doi.org/10.1109/LMWC.2005.851552
  10. H.-H. Hsieh and L.-H. Liu, "A 40-GHz Low-Noise Amplifier with a Positive Feedback Network in 0.18 ${\mu}m$ CMOS," IEEE Trans. Microw. Theory Tech., vol. 57, no. 8, Aug. 2009, pp.1895-1902. https://doi.org/10.1109/TMTT.2009.2025418
  11. V. Aparin and L. Larson, "Modified Derivative Superposition Method for Linearizing FET Low Noise Amplifiers," RFIC Symp. Dig., 2004, pp. 105-108.