Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
권호 표지
DOI QR코드

DOI QR Code

Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device

  • Jo, Yongcheol (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Kim, Jongmin (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Cho, Sangeun (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Kim, Hyungsang (Division of Physics and Semiconductor Science, Dongguk University) ;
  • Im, Hyunsik (Division of Physics and Semiconductor Science, Dongguk University)
  • Received : 2017.03.28
  • Accepted : 2017.04.30
  • Published : 2017.05.31
Download PDF
⟨ Previous Next ⟩

Abstract

Strongly correlated electron systems which induce strong electron-electron interaction at ultra-low temperatures have always been an intriguing topic in mesoscopic condensed matter physics. Below 130 mK, a peculiar gap can be found in Al/$SiO_2$/Si:P structured tunnelling devices. The gap survives at the base temperature of more than 1800 gauss (30 mK), contrary to the superconductivity of the top Al electrode, which is completely suppressed above 100 gauss. This outcome implies that the observed gap is induced by Coulomb interaction in the heavily doped Si.

Keywords

References

  1. T.F. Rosenbaum, R.F. Milligan, M.A. Paalanen, G.A. Thomas, R.N. Bhatt, and W. Lin, Phys. Rev. B 27, 7509 (1983). https://doi.org/10.1103/PhysRevB.27.7509
  2. C.J. Chen, Introduction to Scanning Tunneling Microscopy (Oxford University Press, New York, 1993).
  3. B.L. Althsuler and A.G. Aronov, Solid State Commun. 30, 115 (1979). https://doi.org/10.1016/0038-1098(79)90967-0
  4. M. Lee, J.G. Massey, V.L. Nguyen, and B.I. Shklovskii, Phys. Rev. B 60, 1582 (1999).
  5. A.L. Efros and B.I. Shklovskii, J. Phys. C 8, L49 (1975). https://doi.org/10.1088/0022-3719/8/4/003
  6. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, New York, 1984).
  7. I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, P. Thomas, H. Vaupel, and R.W. Van Der Heijden, Phys. Rev. Lett. 75, 4764 (1995). https://doi.org/10.1103/PhysRevLett.75.4764